Support, adhesive sheet, laminated structure, semiconductor device, and method for manufacturing printed wiring board

ABSTRACT

A method for manufacturing a printed wiring board which includes: Step (A) of laminating an adhesive sheet including a support and a resin composition layer bonded to the support to an inner layer board so that the resin composition layer is bonded to the inner layer board; Step (B) of thermally curing the resin composition layer to form an insulating layer; and Step (C) of removing the support, in this order, in which the support satisfies a condition (MD1): a maximum expansion coefficient E MD  in an MD direction at 120° C. or more is less than 0.2% and a condition (TD1): a maximum expansion coefficient E TD  in a TD direction at 120° C. or more is less than 0.2% below, when being heated under predetermined heating conditions, does not lower the yield even when the insulating layer is formed by thermally curing the resin composition layer with a support attached to the resin composition layer.

CROSS REFERENCES TO RELATED APPLICATIONS

This application is a continuation of International Patent ApplicationNo. PCT/JP2015/067087, filed on Jun. 12, 2015, and claims priority toJapanese Patent Application No. 2014-212065, filed on Oct. 16, 2014,both of which are incorporated herein by reference in their entireties.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to methods for manufacturing a printedwiring board. The present invention also relates to adhesive sheets,supports, and laminated structures to be used in such a method, andsemiconductor devices comprising the printed wiring board produced bysuch a manufacturing method.

Discussion of the Background

As a method for manufacturing a printed wiring board, a method formanufacturing a printed wiring board by a buildup method in which aninsulating layer and a conductor layer are alternately stacked has beenknown. In the method for manufacturing a printed wiring board by thebuildup method, generally, the insulating layer is formed by thermallycuring a resin composition. In a multilayer printed wiring board, aplurality of buildup layers formed by the buildup method are comprised,and the wiring is required to have a finer structure and a higherdensity.

For example, Japanese Patent Application Laid-open No. 2014-7403, whichis incorporated herein by reference in its entirety, discloses a step oflaminating a support-attached resin composition layer (hereinafterreferred to as an adhesive sheet) on an inner layer board, thenthermally curing the resin composition layer, and thereafter peeling offthe support.

There remains, however, a need for improved methods for manufacturingprinted wiring boards.

SUMMARY OF THE INVENTION

Accordingly, it is one object of the present invention to provide novelmethods for manufacturing a printed wiring board.

It is another object of the present invention to provide novel adhesivesheets to be used in such a method.

It is another object of the present invention to provide novel supportsto be used in such a method.

It is another object of the present invention to provide novel laminatedstructures to be used in such a method.

It is another object of the present invention to provide novelsemiconductor devices which contain a printed wiring board produced bysuch a method.

These and other objects, which will become apparent during the followingdetailed description, have been achieved by the inventors' discovery ofthe following problems. In a method for manufacturing a printed wiringboard by bonding an adhesive sheet to an inner layer board and peelingoff the support after thermal curing, the support expands in the thermalcuring step, whereby the resin composition is pushed by the support inthe vicinity of the edge part of the support to run on the support or togenerate a raised part where the resin composition is raised to such anextent that the raised part exceeds the thickness of the support.Consequently, the flatness of the insulating layer formed in a step forbonding further the adhesive sheet in a subsequent buildup step isimpaired, and winkles and lifting of the support are caused to lower theyield of the printed wiring board to be manufactured. Or in the step ofpeeling off the support, the raised part is dropped out to be separatedand further to adhere to the insulating layer (this phenomenon isreferred to as “resin chip adhesion”) so as to lower the yield of theprinted wiring board to be manufactured.

Therefore, one object of the present invention is to provide a methodfor manufacturing a printed wiring board that does not lower the yieldeven when the insulating layer is formed by thermally curing the resincomposition layer with the support attached to the resin compositionlayer, and to provide an adhesive sheet, a support, and a laminatedstructure to be used in such a method.

As a result of intensive study to solve the aforementioned problems, theinventors of the present invention have found that the problems can besolved by using an adhesive sheet comprising a support exhibitingpredetermined expansion properties at the time of thermal curing of theresin composition layer.

Thus, the present invention provides”

(1) A support satisfying a condition (MD1) and a condition (TD1) belowwhen being heated under heating conditions below:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%, and

Condition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%.

(2) The support according to (1), wherein the support satisfies acondition (MD2) and a condition (TD2):

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%, and

Condition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%. (3) A support satisfying acondition (MD3) and a condition (TD3) below when being heated underheating conditions below:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD3): a temperature at which an expansion coefficient in anMD direction becomes maximum is less than 120° C., and

Condition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.

(4) A support satisfying a condition (MD4) and a condition (TD4) below:

Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C., and

Condition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.

(5) An adhesive sheet comprising:

a support satisfying a condition (MD1) and a condition (TD1) below whenbeing heated under heating conditions below:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%, and

Condition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%; and

a resin composition layer bonded to the support.

(6) The adhesive sheet according to (5), wherein the support satisfies acondition (MD2) and a condition (TD2) below:

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%, and

Condition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.

(7) An adhesive sheet comprising:

a support satisfying a condition (MD3) and a condition (TD3) below whenbeing heated under the following heating conditions:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD3): a temperature at which an expansion coefficient in anMD direction becomes maximum is less than 120° C., and

Condition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.; and

a resin composition layer bonded to the support.

(8) An adhesive sheet comprising:

a support satisfying a condition (MD4) and a condition (TD4) below:

Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C., and

Condition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.; and

a resin composition layer bonded to the support.

(9) A method for manufacturing a printed wiring board, comprising:

Step (A) of laminating an adhesive sheet comprising a support and aresin composition layer bonded to the support to an inner layer board sothat the resin composition layer is bonded to the inner layer board;

Step (B) of thermally curing the resin composition layer to form aninsulating layer; and

Step (C) of removing the support, in this order, wherein

the support satisfies a condition (MD1) and a condition (TD1) below whenbeing heated under heating conditions below:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%, and

Condition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%.

(10) The method for manufacturing a printed wiring board according to(9), wherein the support satisfies a condition (MD2) and a condition(TD2) below:

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%, and

Condition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.

(11) A method for manufacturing a printed wiring board, comprising:

Step (A) of laminating an adhesive sheet comprising a support and aresin composition layer bonded to the support to an inner layer board sothat the resin composition layer is bonded to the inner layer board;

Step (B) of thermally curing the resin composition layer to form aninsulating layer; and

Step (C) of removing the support, in this order, wherein

the support satisfies a condition (MD3) and a condition (TD3) below whenbeing heated under heating conditions below:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes,

Condition (MD3): a temperature at which an expansion coefficient in anMD direction becomes maximum is less than 120° C., and

Condition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.

(12) A method for manufacturing a printed wiring board, comprising:

Step (A) of laminating an adhesive sheet comprising a support and aresin composition layer bonded to the support to an inner layer board sothat the resin composition layer is bonded to the inner layer board;

Step (B) of thermally curing the resin composition layer to form aninsulating layer; and

Step (C) of removing the support,

in this order, wherein

in Step (B), a condition (MD4) and a condition (TD4) below aresatisfied:

Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C., and

Condition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.

(13) The method for manufacturing a printed wiring board according toany one of (9) to (12), wherein Step (B) comprises:

(i) a step of heating the resin composition layer at a temperature T₁(50° C.≦T₁<150° C.) and;

(ii) a step of thermally curing the resin composition layer at atemperature T₂ (150° C.≦T₂≦240° C.) after the step of heating.

(14) The method for manufacturing a printed wiring board according toany one of (9) to (11), wherein

under the heating conditions, a minimum melt viscosity of the resincomposition layer when the expansion coefficient of the support in theTD direction is 0 (%) or less is 10,000 poise or less, and a minimummelt viscosity of the resin composition layer when the expansioncoefficient of the support in the MD direction is 0 (%) or less is10,000 poise or less.

(15) A semiconductor device comprising the printed wiring boardmanufactured by the method for manufacturing a printed wiring boardaccording to any one of (9) to (14).

(16) A laminated structure comprising:

an inner layer board;

an insulating layer provided on the inner layer board; and

a support bonded to the insulating layer, wherein

when a thickness of a central part of the insulating layer is determinedto be t (μm), a thickness of the insulating layer comprising a raisedpart outside the central part is 2.5t (μm) or less.

(17) The laminated structure according to (16), wherein the thickness tsatisfies t≦40.

(18) A laminated structure comprising:

an inner layer board;

an insulating layer provided on the inner layer board; and

a support bonded to the insulating layer, wherein

a highest point of a raised part of the insulating layer to which thesupport is bonded is at a position lower than a height of a surface ofthe support.

(19) A laminated structure comprising:

an inner layer board;

an insulating layer provided on the inner layer board; and

a support bonded to the insulating layer, wherein

a difference in height between a lowest point and a highest point is 60μm or less, where at the lowest point a height of the insulating layerthat is a height from an interface between the insulating layer and theinner layer board to an interface where the insulating layer and thesupport are bonded is the lowest, and at the highest point the height ofthe insulating layer is the highest.

Effect of the Invention

According to the present invention, because the adhesive sheet in usedcomprises a support exhibiting the predetermined expansion propertieseven when the insulating layer is formed by thermally curing the resincomposition layer with the support attached to the resin compositionlayer, the phenomena in which the resin composition is pushed by thesupport in the vicinity of the end part of the support at the time ofthermal curing to run on the support and in which the resin compositionis raised to such an extent that the raised part exceeds the thicknessof the support can be effectively reduced. In addition, the flatness ofthe insulation layer formed can be ensured even when the resincomposition is raised. Consequently, the uniformity of the thickness ofthe insulation layer formed in the subsequent buildup step can beimproved. As a result, a method for manufacturing a printed wiring boardthat can further improve the yield can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same become betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIG. 1 is a schematic graph illustrating an expansion behavior of asupport in the TD and MD directions during heating.

FIG. 2 is a schematic graph illustrating the expansion behavior of thesupport in the TD and MD directions during heating.

FIG. 3 is a schematic graph illustrating the expansion behavior of thesupport in the TD and MD directions during heating.

FIG. 4 is a schematic plan view of a laminated structure.

FIG. 5 is a schematic view of a cut end face of the laminated structure.

EXPLANATION OF THE REFERENCE LETTERS OF NUMERALS

10 Laminated Structure

10A Central Part

10B End Part

10C Raised Part

22 Support

22 a Edge Part

22 b Surface

24 Insulating Layer

30 Inner Layer Board

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Description of Terms

In the present invention, the “MD direction (Machine Direction)” of thesupport means the longitudinal direction of the support at the time ofmanufacturing the support, that is, the conveying direction of thelong-length support at the time of production. The “TD direction(Transverse Direction)” of the support means the width direction of thesupport at the time of manufacturing the support and is orthogonal tothe MD direction. Both the MD direction and the TD direction aredirections orthogonal to the thickness direction of the support.

In the present invention, the “expansion coefficient” of the support inthe MD direction or the TD direction of the support means the increasedratio (%) in the length (size) of the support in the MD direction or theTD direction of the support when the support is heated underpredetermined heating conditions. The expansion coefficient (%) of thesupport can be determined by Formula: (L−L₀)/L₀×100, where the initiallength (that is, the length of the support at the time of the start ofheating) is L₀ and the length of the support after heating for apredetermined time is L. A positive expansion coefficient indicates thatthe support expands by heating, whereas a negative expansion valueindicates that the support shrinks by heating. The expansion coefficient(%) of the support can be determined by measuring the change in thelength of the support in the MD direction or the TD direction of thesupport when the support is heated under the predetermined heatingconditions, using a thermomechanical analyzer. Examples ofthermomechanical analyzer may include “Thermo Plus TMA8310” manufacturedby Rigaku Corporation and “TMA-SS6100” manufactured by Seiko InstrumentsInc.

In the present invention, the “maximum expansion coefficient” of thesupport in the MD direction or the TD direction of the support means anexpansion coefficient indicating the maximum value when the expansioncoefficient is checked with time in accordance with the followingheating conditions.

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes.

The heating conditions are conditions for specifying properties such asthe expansion coefficient of the support and may correspond to or maynot correspond to conditions in “Step (B) of forming insulating layer bythermally curing resin composition layer” described below.

Before the method for manufacturing a printed wiring board of thepresent invention is described in detail, the “support” used in themethod for manufacturing of the present invention will be described.

Support

The support of the present invention satisfies the following condition(MD1) and condition (TD1) or the following condition (MD2) and condition(TD2), when it is heated under the following heating condition.

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes.

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%. Condition (TD1): amaximum expansion coefficient E_(TD) (%) in a TD direction at 120° C. ormore is less than 0.2%.

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%.

Condition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.

Generally, the support expands or shrinks by heating. The degree ofexpansion and/or shrinkage at the time of heating varies depending onthe type of the support. Due to the production steps (for example,selection of constituent materials of the support and tension applied atthe time of winding (conveying) the conveyed support), the support islikely to shrink more in the MD direction than in the TD direction andlikely to expand more in the TD direction than in the MD direction whenthe support is heated.

Generally, the temperature at which the support starts to suddenlyexpand is about 120° C. In the present invention, the support satisfiesthe following condition (MD 1) and condition (TD I).

Condition (MD1)

The condition (MD1) relates to the maximum expansion coefficient E_(MD)in the MD direction at 120° C. or more. When the insulating layer isformed by thermally curing the resin composition layer with the supportattached to the resin composition layer, the maximum expansioncoefficient E_(MD) is less than 0.2%. The lower limit of the maximumexpansion coefficient E_(MD) is preferably −4% or more, more preferably−3% or more, and further preferably −2% or more from the viewpoint ofimproving the uniformity of roughness after roughening the surface ofthe insulating layer. The lower limit of the maximum expansioncoefficient E_(MD) is preferably closer to 0% from the viewpoint ofimproving the flatness of the insulating layer and the uniformity of theroughness after roughening the surface of the insulating layer, therebyto improve the yield of the wiring board.

Condition (TD1)

The condition (TD1) relates to the maximum expansion coefficient E_(TD)in the TD direction at 120° C. or more. When the insulating layer isformed by thermally curing the resin composition layer with the supportattached to the resin composition layer, the maximum expansioncoefficient E_(TD) is less than 0.2%. The lower limit of the maximumexpansion coefficient E_(TD) is preferably −3% or more and morepreferably −2% or more from the viewpoint of improving the uniformity ofroughness after roughening the surface of the insulating layer. Thelower limit of the maximum expansion coefficient E_(TD) is preferablycloser to 0% from the viewpoint of improving the flatness of theinsulating layer and the uniformity of the roughness after rougheningthe surface of the insulating layer, thereby to improve the yield of thewiring board.

Considering that the temperature at which the resin composition startsto be cured is about 100° C., in the present invention, the supportpreferably satisfies the following condition (MD2) and condition (TD2),

Condition (MD2)

The condition (MD2) relates to the maximum expansion coefficient E_(MD)in the MD direction at 100° C. or more. When the insulating layer isformed by thermally curing the resin composition layer with the supportattached to the resin composition layer, the maximum expansioncoefficient E_(MD) is less than 0%. The lower limit of the maximumexpansion coefficient E_(MD) is not particularly limited and is similarto that of the above condition (MD1). The lower limit of the maximumexpansion coefficient E_(MD) is preferably closer to 0% from theviewpoint of improving the flatness of the insulating layer and theuniformity of the roughness after roughening the surface of theinsulating layer, thereby to improve the yield of the printed wiringboard.

Condition (TD2)

The condition (TD1) relates to the maximum expansion coefficient E_(TD)in the TD direction at 100° C. or more. When the insulating layer isformed by thermally curing the resin composition layer with the supportattached to the resin composition layer, the maximum expansioncoefficient E_(TD) is less than 0%. The lower limit of the maximumexpansion coefficient E_(TD) is not particularly limited and is similarto that of the above condition (TD1). The lower limit of the maximumexpansion coefficient E_(TD) is preferably closer to 0% from theviewpoint of improving the flatness of the insulating layer and theuniformity of the roughness after roughening the surface of theinsulating layer, thereby to improve the yield of the printed wiringboard.

Generally, the temperature at which the support starts to suddenlyexpand is about 120° C. In the present invention, the support satisfiesthe following condition (MD3) and condition (TD3).

Condition (MD3)

In the condition (MD3), a temperature at which an expansion coefficientin an MD direction becomes maximum under the above heating condition isless than 120° C.

Condition (TD3)

In the condition (TD3), a temperature at which an expansion coefficientin a TD direction becomes maximum under the above heating condition isless than 120° C.

Therefore, when the support satisfies the condition (MD3) and condition(TD3), the expansion of the support at 120° C. or more is controlledunder the above heating condition, so that the flatness of theinsulating layer and the uniformity of the roughness of the surface ofthe insulating layer after roughening can be improved and thus yield ofthe printed wiring board can be improved.

Generally, the temperature at which the support starts to suddenlyexpand is about 120° C. In the present invention, the support satisfiesthe following condition (MD4) and condition (TD4).

In the condition (MD4), a temperature at which an expansion coefficientof the support in an MD direction becomes maximum is less than 120° C.

In the condition (TD4), a temperature at which an expansion coefficientof the support in a TD direction becomes maximum is less than 120° C.

By using a support having such properties, the expansion of the supportat 120° C. or more is controlled, so that the resin composition is notpushed by the support in the vicinity of the edge part of the support.This can improve the flatness of the insulating layer, and as a result,the yield of the printed wiring board can be further improved.

The temperature at which the expansion coefficient of the support in theMD direction is the maximum is not particularly limited and is 60° C. ormore or 80° C. or more. The temperature at which the expansioncoefficient of the support in the TD direction is the maximum is notparticularly limited and is 60° C. or more, or 80° C. or more.

As the support, a film made of a plastic material (hereinafter alsosimply referred to as a “plastic film”) is suitably used because it islightweight and exhibits strength necessary at the time of manufacturingthe printed wiring board. Examples of the plastic material may includepolyesters such as polyethylene terephthalate (referred to as “PET”),polyethylene naphthalate (referred to as “PEN”), polycarbonate (referredto as “PC”), acrylic resins such as polymethyl methacrylate (PMMA),cyclic polyolefins, triacetyl cellulose (TAC), polyether sulfide (PES),polyether ketone, and polyimide. Among them, polyethylene terephthalateand polyethylene naphthalate are preferable, and inexpensivepolyethylene terephthalate is particularly preferable as the support.

With regard to a conventional plastic film used for the adhesive sheet,the inventors of the present invention have found that the followingproblems. The conventional plastic film does not satisfy one of or bothof the conditions (MD1 to MD4) (hereinafter referred to as conditions(MD)) or conditions (TD1 to TD4) (hereinafter referred to as conditions(TD)), particularly the condition (TD1, TD2, TD3, or TD4), so that, inthe thermal curing step, the resin composition is pushed by the supportin the vicinity of the edge part of the support to run on the support orthe resin composition is raised to such an extent that the raised partexceeds the thickness of the support. Consequently, the flatness of theinsulating layer formed in a step of bonding the further adhesive sheetin a subsequent buildup step is impaired, and winkles and lifting of thesupport are caused to lower the yield of the printed wiring board, or aphenomenon in which the raised part is dropped out and separated andfurther adheres to the insulating layer (“resin chip adhesion”) occursin the step of peeling off the support so as to lower the yield of theprinted wiring board.

In a suitable embodiment of the present invention, the plastic film issubjected to preheating treatment to prepare a support that satisfiesboth the conditions (MD) and conditions (TD). The preheating treatmentcan be carried out by adjusting conditions depending on the type of theplastic material, the presence or absence of the tension (stretching)applied at the time of production, the axial direction of thestretching, the degree of the stretching, and the heat treatmentconditions after the stretching so that the combination of the condition(MD) and the condition (TD) can be satisfied.

When a long plastic film is used as the plastic film, examples of thepreheating treatment for allowing the support to satisfy the conditions(MD) and the conditions (TD) may include treatment of heating whileapplying tension in one or both of the MD direction and the TD directionof the plastic film.

When the long plastic film is used, generally, a predetermined tensionis applied in the MD direction by conveying using rolls such asconveying rolls at the time of production, so that the supportsatisfying the conditions (MD) and the conditions (TD) may be obtainedby heating while applying tension only in the TD direction.

In the MD direction, the predetermined tension can be applied byadjusting the tension applied to the plastic film stretched between aplurality of rolls. Application of the tension in the TD direction canbe carried out by any conventionally known suitable means. When thetension is applied in the TD direction, a predetermined tension can beapplied using, for example, a tenter having a conventionally knownconfiguration.

The predetermined tension can also be applied in the MD direction or theTD direction of the plastic film using, for example, the weight andgravity of the weight. Specifically, the edge part of one side in thedirection where the plastic film is to be adjusted is fixed to, forexample, a support rod with any suitable adhesive member (for example, aKapton adhesive tape, a PTFE adhesive tape, or a glass cloth adhesivetape), so that the direction to be adjusted in the TD direction or theMD direction corresponds to the vertical direction, and the plastic filmis suspended so that tension is uniformly applied to the entire plasticfilm. Thereafter, the preheating treatment can be carried out by heatingwhile applying the tension by connecting the weight such as a metalplate at the opposite edge part in the direction to be adjusted usingany suitable adhesion member so that the tension is applied to theentire plastic film.

As the magnitude of the tension applied to the plastic film, anysuitable tension can be set in consideration of, for example, thematerial of the plastic film, the expansion coefficient, and thecomposition of the resin composition. For example, the condition inwhich the tension is set to 3 gf/cm² to 30 gf/cm² can be included.

In one embodiment, the heating temperature of the preheating treatmentis preferably (Tg+50)° C. or more, more preferably (Tg+60)° C. or more,further preferably (Tg+70)° C. or more, and further more preferably(Tg+80)° C. or more or (Tg+90)° C. or more, when the glass transitiontemperature of the plastic film is abbreviated as Tg. The upper limit ofthe heating temperature is preferably (T +115)° C. or less, morepreferably (Tg+110)° C. or less, and further preferably (Tg+105)° C. orless, as long as the upper limit is less than the melting point of theplastic film.

When the support is, for example, a PET film, the heating temperature ofthe preheating treatment is preferably 130° C. or more, more preferably140° C. or more, further preferably 150° C. or more, and further morepreferably 160° C. or more or 170° C. or more. The upper limit of theheating temperature is preferably 195° C. or less, more preferably 190°C. or less, and further preferably 185° C. or less.

The heating time may be appropriately determined in accordance with theheating temperature so as to satisfy the condition (MD1) and thecondition (TD1), the condition (MD2) and the condition (TD2), or thecondition (MD3) and the condition (TD3). In one embodiment, the heatingtime is preferably 1 minute or more, more preferably 2 minutes or more,further preferably 5 minutes or more, 10 minutes or more, or 15 minutesor more. The upper limit of the heating time depends on the heatingtemperature and is preferably 120 minutes or less, more preferably 90minutes or less, and further preferably 60 minutes or less.

The atmosphere at the time of carrying out the preheating treatment isnot particularly limited. The examples may include an air atmosphere andan inert gas atmosphere (for example, a nitrogen gas atmosphere, ahelium gas atmosphere, and an argon gas atmosphere). The air atmosphereis preferable from the viewpoint of easily preparing the support.

The preheating treatment may be carried out under any of a reducedpressure, a normal pressure, or an increased pressure, and is preferablycarried out under a normal pressure from the viewpoint of easilypreparing the support.

The surface of the support to be bonded to the resin composition layerdescribed below may be subjected to mat treatment or corona treatment.As the support, a support with a releasing layer may be used. Thereleasing layer is provided on the surface to be bonded to the resincomposition layer. Examples of releasing agents used for the releasinglayer of the support with a releasing layer may include one or moretypes of releasing agents selected from the group consisting of an alkydresin, a polyolefin resin, a urethane resin, and a silicone resin.

The thickness of the support is not particularly limited and ispreferably in a range of 5 μm to 75 μm, more preferably in a range of 10μm to 60 μm, and further preferably in a range of 10 μm to 45 μm. Inparticular, the thickness is preferably 25 μm or more and morepreferably 30 μm or more from the viewpoint of preventing the resin fromrising. When the support with a releasing layer is used, the thicknessof the entire support with a releasing layer is preferably within theabove range.

With reference to FIGS. 1 to 3, the expansion behavior of the supportaccording to an embodiment of the present invention will be describedbriefly.

FIGS. 1 to 3 are graphs schematically illustrating the expansionbehavior of the support in the TD direction and the MD direction whenthe support is heated under the above heating conditions. In FIGS. 1 to3, the left vertical axis represents the expansion coefficient (%) inthe TD direction and the MD direction of the support, the right verticalaxis represents the heating temperature (° C.), and the horizontal axisrepresents the heating time (minute). The graph illustrates theexpansion behavior in the MD direction, the graph b illustrates theexpansion behavior in the TD direction, and the graph c illustrates atemperature profile over time.

As is clear from FIG. 1, according to the graph a, the expansioncoefficient decreases to a negative value in the process of raising thetemperature from 20° C. to 100° C. at a rate of temperature rise of 8°C./min (section of a heating time of 0 minutes to 10 minutes) and theexpansion coefficient gradually decreases in the process of heating at100° C. for 30 minutes (section of a heating time of 10 minutes to 40minutes) in the temperature profile illustrated in the graph c.According to the graph a, the expansion coefficient significantlydecreases in the process of raising the temperature from 100° C. to 180°C. at a rate of temperature rise of 8° C./min (section of a heating timeof 40 minutes to 50 minutes) and the expansion coefficient graduallydecreases in the process of heating at 180° C. for 30 minutes (sectionof a heating time of 50 minutes to 80 minutes) in the temperatureprofile illustrated in the graph c. According to the graph b, theexpansion coefficient becomes slightly higher but decreases to anegative value when the temperature reaches 100° C. in the process ofraising the temperature from 20° C. to 100° C. at a rate of temperaturerise of 8° C./min (section of a heating time of 0 minutes to 10 minutes)and the expansion coefficient gradually decreases in the process ofheating at 100° C. for 30 minutes (section of a heating time of 10minutes to 40 minutes) in the temperature profile illustrated in thegraph c. According to the graph b, the expansion coefficientsignificantly decreases in the process of raising the temperature from100° C. to 180° C. at a rate of temperature rise of 8° C./min (sectionof a heating time of 40 minutes to 50 minutes) and the expansioncoefficient gradually decreases in the process of heating at 180° C. for30 minutes (section of a heating time of 50 minutes to 80 minutes) inthe temperature profile illustrated in the graph c.

With reference to FIG. 2, the expansion behavior of the supportaccording to another embodiment of the present invention will bedescribed briefly.

As is clear from FIG. 2, according to the graph a, the expansioncoefficient becomes slightly higher but remains to be less than 0.2% inthe process of raising the temperature from 20° C. to 100° C. at a rateof temperature rise of 8° C./min (section of a heating time of 0 minutesto 10 minutes) and the expansion coefficient gradually decreases in theprocess of heating at 100° C. for 30 minutes (section of a heating timeof 10 minutes to 40 minutes) in the temperature profile illustrated inthe graph c. According to the graph a, the expansion coefficientsignificantly decreases in the process of raising the temperature from100° C. to 180° C. at a rate of temperature rise of 8° C./min (sectionof a heating time of 40 minutes to 50 minutes) and the expansioncoefficient gradually decreases in the process of heating at 180° C. for30 minutes (section of a heating time of 50 minutes to 80 minutes) inthe temperature profile illustrated in the graph c. According to thegraph b, the expansion coefficient becomes slightly higher but remainsto be less than 0.2% in the process of raising the temperature from 20°C. to 100° C. at a rate of temperature rise of 8° C./min (section of aheating time of 0 minutes to 10 minutes) and the expansion coefficientgradually decreases in the process of heating at 100° C. for 30 minutes(section of a heating time of 10 minutes to 40 minutes) in thetemperature profile illustrated in the graph c. According to the graphb, the expansion coefficient significantly decreases in the process ofraising the temperature from 100° C. to 180° C. at a rate of temperaturerise of 8° C./min (section of a heating time of 40 minutes to 50minutes) and the expansion coefficient gradually decreases in theprocess of heating at 180° C. for 30 minutes (section of a heating timeof 50 minutes to 80 minutes) in the temperature profile illustrated inthe graph c.

With reference to FIG. 3, the expansion behavior of the supportaccording to another embodiment of the present invention will bedescribed briefly.

As is clear from FIG. 3, according to the graph a, the expansioncoefficient becomes slightly higher to reach the maximum expansion pointMax1 where the expansion coefficient becomes maximum in the process ofraising the temperature from 20° C. to 100° C. at a rate of temperaturerise of 8° C./min (section of a heating time of 0 minutes to 10 minutes)and the expansion coefficient gradually decreases from the maximumexpansion point Max1 in the process of heating at 100° C. for 30 minutes(section of a heating time of 10 minutes to 40 minutes) in thetemperature profile illustrated in the graph c. According to the grapha, the expansion coefficient significantly decreases in the process ofraising the temperature from 100° C. to 180° C. at a rate of temperaturerise of 8° C./min (section of a heating time of 40 minutes to 50minutes) and the expansion coefficient gradually decreases in theprocess of heating at 180° C. for 30 minutes (section of a heating timeof 50 minutes to 80 minutes) in the temperature profile illustrated inthe graph c. According to the graph b, the expansion coefficient becomesslightly higher in the process of raising the temperature from 20° C. to100° C. at a rate of temperature rise of 8° C./min (section of a heatingtime of 0 minutes to 10 minutes) and the expansion coefficient becomesfurther slightly higher to reach the maximum expansion point Max2 wherethe expansion coefficient becomes maximum in the process of heating at100° C. for 30 minutes (section of a heating time of 10 minutes to 40minutes) in the temperature profile illustrated in the graph c.According to the graph b, the expansion coefficient significantlydecreases from the maximum expansion point Max2 in the process ofraising the temperature from 100° C. to 180° C. at a rate of temperaturerise of 8° C./min (section of a heating time of 40 minutes to 50minutes) and the expansion coefficient gradually decreases in theprocess of heating at 180° C. for 30 minutes (section of a heating timeof 50 minutes to 80 minutes) in the temperature profile illustrated inthe graph c. As is clear from the graphs a and b, in both of theexpansion behavior in the MD direction and the expansion behavior in theTD direction, the maximum expansion points Max1 and Max2 are present at120° C. or less and the expansion coefficient at 120° C. or more doesnot exceed the expansion coefficients at the maximum expansion pointsMax1 and Max2.

Adhesive Sheet

The “adhesive sheet” used in the method for manufacturing a printedwiring board of the present invention will be described.

The adhesive sheet of the present invention comprises theabove-described support. Specifically, the adhesive sheet of the presentinvention preferably comprises the support that satisfies the followingcondition (MD1) and condition (TD1) when it is heated under thefollowing heating conditions:

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes, and the resin composition layer bonded to thesupport.

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%.

Condition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%.

The support in the adhesive sheet preferably satisfies the followingcondition (MD2) and condition (TD2).

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%.

Condition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.

The adhesive sheet preferably comprises the support that satisfies thefollowing condition (MD3) and condition (TD3) when it is heated underthe following heating conditions, and a resin composition layer bondedto the support.

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes.

Condition (MD3): a temperature at which an expansion coefficient in anMD direction becomes maximum is less than 120° C.

Condition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.

The adhesive sheet preferably comprises the support satisfying thefollowing condition (MD4) and condition (TD4), and a resin compositionlayer bonded to the support.

Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C.

Condition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.

The details of the expansion properties of the support in the MDdirection and the TD direction and the conditions of the preheatingtreatment when the support is heated under the above heating conditionsare as described above.

Resin Composition Layer

The resin composition used for the resin composition layer comprised inthe adhesive sheet is not particularly limited as long as the curedproduct of the resin composition has sufficient hardness and insulatingproperties. The resin composition used for the resin composition layerpreferably comprises an inorganic filler from the viewpoint of loweringthe thermal expansion coefficient of the obtained insulating layer toprevent cracks and circuit distortion caused by the difference inthermal expansion between the insulating layer and the conductor layer.

The content of the inorganic filler in the resin composition ispreferably 30% by mass or more, more preferably 45% by mass or more, andfurther preferably 60% by mass or more from the viewpoint of loweringthe thermal expansion coefficient of the obtained insulating layer.

In the present invention, the content of each component constituting theresin composition is the amount when the total mass of the nonvolatilecomponents in the resin composition is determined to be 100% by mass.

The upper limit of the content of the inorganic filler in the resincomposition is preferably 95% by mass or less, more preferably 85% bymass or less, and further preferably 75% by mass or less from theviewpoint of the mechanical strength of the obtained insulating layer.

The inorganic filler is not particularly limited and the examples mayinclude silica, alumina, glass, cordierite, silicon oxide, bariumsulfate, barium carbonate, talc, clay, mica powder, zinc oxide,hydrotalcite, boehmite, aluminum hydroxide, magnesium hydroxide, calciumcarbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminumnitride, manganese nitride, aluminum borate, strontium carbonate,strontium titanate, calcium titanate, magnesium titanate, bismuthtitanate, titanium oxide, zirconium oxide, barium titanate, bariumzirconate titanate, barium zirconate, calcium zirconate, zirconiumphosphate, and zirconium phosphate tungstate. Among them, amorphoussilica, fused silica, crystalline silica, synthetic silica, and hollowsilica are particularly suitable. As the silica, spherical silica ispreferable. The inorganic fillers may be used singly or in combinationof two or more of them. Examples of commercially available sphericalfused silica may include “SOC 2” and “SOC 1” manufactured by AdmatechsCompany Limited.

The average particle diameter of the inorganic filler used in the resincomposition is preferably in a range of 0.01 μm to 5 μm, more preferablyin a range of 0.05 μm to 2 μm, further preferably in a range of 0.1 μmto 1 μm, and further more preferably 0.2 μm to 0.8 μm. The averageparticle diameter of the inorganic filler can be measured by a laserdiffraction-scattering method based on Mie scattering theory.Specifically, the average particle diameter can be measured by makingthe particle size distribution of the inorganic filler on a volume basiswith a laser diffraction-scattering type particle size distributionmeasuring apparatus and determining the median diameter to be theaverage particle diameter. As the measurement sample, a sample preparedby dispersing the inorganic filler in water by use of ultrasonic wavescan be preferably used. As the laser diffraction-scattering typeparticle size distribution measuring apparatus, for example, “LA-500”manufactured by HORIBA, Ltd. can be used.

The inorganic filler is preferably treated with one or more surfacetreatment agents selected from, for example, an aminosilane-basedcoupling agent, an epoxysilane-based coupling agent, amercaptosilane-based coupling agent, a silane-based coupling agent, anorganosilazane compound, and a titanate-based coupling agents from theviewpoint of improving moisture resistance and dispersibility. Examplesof commercially available surface treatment agents may include “KBM403”(3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu ChemicalCo., Ltd., “KBM803” (3-mercaptopropyltrimethoxysilane) manufactured byShin-Etsu Chemical Co., Ltd., “KBE903” (3-aminopropyltriethoxysilane)manufactured by Shin-Etsu Chemical Co., Ltd., “KBM573”(N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin-EtsuChemical Co., Ltd., and “SZ-31” (hexamethyldisilazane) manufactured byShin-Etsu Chemical Co., Ltd.

The degree of the surface treatment with the surface treatment agent canbe evaluated by the amount of carbon per unit surface area of theinorganic filler. The amount of carbon per unit surface area of theinorganic filler is preferably 0.02 mg/m² or more, more preferably 0.1mg/m² or more, and further preferably 0.2 mg/m² or more from theviewpoint of improving the dispersibility of the inorganic filler. Onthe other hand, the amount of carbon per unit surface area of theinorganic filler is preferably 1 mg/m² or less, more preferably 0.8mg/m² or less, and further preferably 0.5 mg/m² or less from theviewpoint of preventing increase in the melt viscosity of the resinvarnish and the melt viscosity when the adhesive sheet is formed.

The amount of carbon per unit surface area of the inorganic filler canbe measured after the inorganic filler that has been subjected to thesurface treatment is washed with a solvent (for example, methyl ethylketone (MEK)). Specifically, a sufficient amount of MEK as a solvent isadded to the inorganic filler that has been surface-treated with thesurface treatment agent, and the inorganic filler is ultrasonicallywashed at 25° C. for 5 minutes. After removing the supernatant liquidand drying the nonvolatile components, the amount of carbon per unitsurface area of the inorganic filler can be measured with a carbonanalyzer. As the carbon analyzer, for example, “EMIA-320V” manufacturedby HORIBA, Ltd. can be used.

The resin composition used for the resin composition layer comprises athermosetting resin as a material. As the thermosetting resin, aconventionally known thermosetting resin used at the time of forming aninsulating layer of a printed wiring board can be used, and among them,an epoxy resin is preferable. The resin composition may also comprise acuring agent, if necessary. In one embodiment, a resin compositioncomprising the inorganic filler, the epoxy resin, and the curing agentcan be used. The resin composition used for the resin composition layermay further comprise additives such as a thermoplastic resin, a curingaccelerator, a flame retardant, and rubber particles.

Hereinafter, the epoxy resin, the curing agent, and additives that canbe used as the materials of the resin composition will be described.

Epoxy Resin

Examples of the epoxy resin may include a bisphenol A epoxy type resin,a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, abisphenol AF type epoxy resin, a dicyclopentadiene type epoxy resin, atrisphenol type epoxy resin, a naphthol novolak type epoxy resin, aphenol novolak type epoxy resin, a tert-butyl-catechol type epoxy resin,a naphthalene type epoxy resin, a naphthol type epoxy resin, ananthracene type epoxy resin, a glycidylamine type epoxy resin, aglycidyl ester type epoxy resin, a cresol novolac type epoxy resin, abiphenyl type epoxy resin, a linear aliphatic epoxy resin, an epoxyresin having a butadiene structure, an alicyclic epoxy resin, aheterocyclic epoxy resin, a spiro ring containing epoxy resin, acyclohexane dimethanol type epoxy resin, a naphthylene ether type epoxyresin, and a trimethylol type epoxy resin. These epoxy resins may beused singly or in combination of two or more of them.

The epoxy resin preferably includes an epoxy resin comprising two ormore epoxy groups in one molecule. When the nonvolatile component of theepoxy resin is determined to be 100% by mass, the epoxy resin preferablycomprises the epoxy resin having two or more epoxy groups in onemolecule at least in an amount of 50% by mass or more. Among them, theepoxy resin comprising an epoxy resin having two or more epoxy groups inone molecule and being a liquid state at a temperature of 20° C.(hereinafter, referred to as a “liquid epoxy resin”) and an epoxy resinhaving three or more epoxy groups in one molecule and being a solidstate at a temperature of 20° C. (hereinafter, referred to as a “solidepoxy resin”) are preferable. The resin composition having excellentflexibility can be obtained by using both of the liquid epoxy resin andthe solid epoxy resin as the epoxy resin. The breaking strength of theinsulating layer formed by curing the resin composition is alsoimproved.

Preferable examples of the liquid epoxy resin may include a bisphenol Atype epoxy resin, a bisphenol F type epoxy resin, a phenol novolak typeepoxy resin, and a naphthalene type epoxy resin. The bisphenol A typeepoxy resin, the bisphenol F type epoxy resin, and the naphthalene typeepoxy resin are preferable and the bisphenol A type epoxy resin and thebisphenol F type epoxy resin are further preferable. Specific examplesof the liquid epoxy resin may include “HP4032”, “HP4032D”, and“HP4032SS” (naphthalene type epoxy resins) manufactured by DICCorporation, “jER828EL” (a bisphenol A type epoxy resin), “jER807” (abisphenol F type epoxy resin), and “jER152” (a phenol novolak type epoxyresin) manufactured by Mitsubishi Chemical Corporation, “ZX1059” (amixture of a bisphenol A type epoxy resin and a bisphenol F type epoxyresin) manufactured by NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD., and“EX-721” (a glycidyl ester type epoxy resin) manufactured by NagaseChemteX Corporation. These resins may be used singly or in combinationof two or more of them.

Preferable examples of the solid epoxy resin may include a naphthalenetype tetrafunctional epoxy resin, a cresol novolak type epoxy resin, adicyclopentadiene type epoxy resin, a trisphenol type epoxy resin, anaphthol novolak type epoxy resin, a biphenyl type epoxy resin, or anaphthylene ether type epoxy resin. The naphthalene type tetrafunctionalepoxy resin, the biphenyl type epoxy resin, or the naphthylene ethertype epoxy resin is more preferable, and the naphthalene typetetrafunctional epoxy resin and the biphenyl type epoxy resin arefurther preferable. Specific examples of the solid epoxy resin mayinclude “HP4032H”, “HP-4700”, and “HP-4710” (naphthalene typetetrafunctional epoxy resins), “N-690” (a cresol novolak type epoxyresin), “N-695” (a cresol novolak type epoxy resin), “HP-7200” (adicyclopentadiene type epoxy resin), “EXA7311”, “EXA7311 -G3”,“EXA7311-G4”, “EXA7311-G4S”, and “HP6000” (naphthylene ether type epoxyresins) manufactured by DIC Corporation, “EPPN-502H” (a trisphenol typeepoxy resin), “NC7000L” (a naphthol novolak type epoxy resin),“NC3000H”, “NC3000”, “NC3000L”, and “NC3100” (biphenyl type epoxyresins) manufactured by Nippon Kayaku Co., Ltd., “ESN475” (a naphtholnovolak type epoxy resin) and“”ESN485V″ (a naphthol novolak type epoxyresin) manufactured by NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD.,“YX4000H” and “YL6121” (biphenyl type epoxy resins), “YX4000HK” (abixylenol type epoxy resin) manufactured by Mitsubishi ChemicalCorporation, “PG-100” and “CG-500” manufactured by Osaka Gas ChemicalsCo., Ltd. and “YL7800” (a fluorene type epoxy resin) manufactured byMitsubishi Chemical Corporation.

When both of the liquid epoxy resin and the solid epoxy resin are usedas the epoxy resin, the quantitative ratio of the resins (liquid epoxyresin : solid epoxy resin) is preferably in a range of 1:0.1 to 1:5 in aratio by mass. By setting the amount ratio of the liquid epoxy resin andthe solid epoxy resin to the range, effects as described below can beobtained. Namely, i) appropriate adhesiveness is provided when the resincomposition is used in the form of an adhesive sheet, ii) sufficientflexibility and an improved handleability can be obtained when the resincomposition is used in the form of an adhesive sheet, and iii) theinsulating layer having sufficient breaking strength can be obtained.From the viewpoint of the effects of i) to iii), the quantitative ratioof the liquid epoxy resin and the solid epoxy resin (liquid epoxy resin: solid epoxy resin) is more preferably in a range of 1:0.3 to 1:4,further preferably in a range of 1:0.6 to 1:3, and particularlypreferably 1:0.8 to 1:2.5 in a ratio by mass.

The content of the epoxy resin in the resin composition is preferably 3%by mass to 50% by mass, more preferably 5% by mass to 45% by mass,further preferably 5% by mass to 40% by mass, and further morepreferably 7% by mass to 35% by mass.

The weight average molecular weight of the epoxy resin is preferably 100to 5,000, more preferably 250 to 3,000, and further preferably 400 to1,500. Here, the weight average molecular weight of the epoxy resin is aweight average molecular weight in terms of polystyrene measured by agel permeation chromatography (GPC) method.

The epoxy equivalent of the epoxy resin is preferably 50 to 3,000, morepreferably 80 to 2,000, and further preferably 110 to 1,000. By settingthe epoxy equivalent within this range, the crosslinking density of thecured product becomes sufficient and the insulating layer having smallsurface roughness can be obtained. The epoxy equivalent can be measuredin accordance with JIS K 7236 and it means the mass of a resincontaining one equivalent of epoxy groups.

Curing Agent

The curing agent is not particularly limited as long as it has afunction of curing the epoxy resin, and the examples may include aphenol-based curing agent, a naphthol-based curing agent, an activeester-based curing agent, a benzoxazine-based curing agent, a cyanateester-based curing agent, and a carbodiimide-based curing agent. Thecuring agents may be used singly or in combination of two or more ofthem.

As the phenol-based curing agent and the naphthol-based curing agent, aphenol-based curing agent having a novolac structure or a naphthol-basedcuring agent having a novolac structure is preferable from the viewpointof heat resistance and water resistance. A nitrogen-containingphenol-based curing agent is preferable and a triazineskeleton-containing phenol-based curing agent is more preferable fromthe viewpoint of adhesion to the conductor layer. Among them, thetriazine skeleton-containing phenol novolak resin is preferable from theviewpoint of highly satisfying heat resistance, water resistance, andadhesion (peeling strength) to the conductor layer.

Specific examples of the phenol-based curing agent and thenaphthol-based curing agent may include “MEH-7700”, “MEH-7810”, and“MEH-7851” manufactured by Meiwa Plastic Industries, Ltd., “NHN”, “CBN”,and “GPH” manufactured by Nippon Kayaku Co., Ltd., “SN-170”, “SN-180”,“SN-190”, “SN-475”, “SN-485”, “SN-495”, “SN-375”, and “SN-395”manufactured by Tohto Kasei Co., Ltd., and “LA-7052”, “LA-7054”, and“LA-3018” manufactured by DIC Corporation.

The active ester-based curing agent is not particularly limited, andgenerally compounds each having two or more highly reactive ester groupssuch as phenol esters, thiophenol esters, N-hydroxyamine esters, andesters of heterocyclic hydroxy compounds in one molecule are preferablyused. The active ester-based curing agent is preferably obtained by thecondensation reaction of a carboxylic acid compound and/or athiocarboxylic acid compound with a hydroxy compound and/or a thiolcompound. In particular, an active ester-based curing agent obtainedfrom a carboxylic acid compound and a hydroxy compound is preferable,and an active ester-based curing agent obtained from a carboxylic acidcompound and a phenol compound and/or a naphthol compound is morepreferable from the viewpoint of improving heat resistance. Examples ofthe carboxylic acid compound may include benzoic acid, acetic acid,succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalicacid, terephthalic acid, and pyromellitic acid. Examples of the phenolcompound and the naphthol compound may include hydroquinone, resorcin,bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylatedbisphenol A, methylated bisphenol F, methylated bisphenol S, phenol,o-cresol, m-cresol, p-cresol, catechol, a-naphthol, 13-naphthol,1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene,2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone,tetrahydroxybenzophenone, phloroglucin, benzenetriol, adicyclopentadiene type diphenol compound, and phenol novolac. Here, the“dicyclopentadiene type diphenol compound” means a diphenol compoundobtained by condensing two molecules of phenol with one molecule ofdicyclopentadiene.

Specifically, an active ester compound comprising a dicyclopentadienetype diphenol structure, an active ester compound comprising anaphthalene structure, an active ester compound including an acetylatedcompound of phenol novolac, and an active ester compound including abenzoylated compound of phenol novolak are preferable. Among them, theactive ester compound comprising a naphthalene structure and the activeester compound comprising a dicyclopentadiene type diphenol structureare more preferable. The “dicyclopentadiene type diphenol structure”means a divalent structure unit formed of a phenylene group, adicyclopentalene group, and a phenylene group linked in this order.

Examples of commercially available products of the active ester-basedcuring agent may include “EXB9451”, “EXB9460”, “EXB9460S”, and“HPC-8000-65T” (manufactured by DIC Corporation) as active estercompounds comprising a dicyclopentadiene type diphenol structure,“EXB9416-70BK” (manufactured by DIC Corporation) as an active estercompound comprising a naphthalene structure, “DC808” (manufactured byMitsubishi Chemical Corporation) as an active ester compound includingan acetylated compound of phenol novolac, and “YLH1026” (manufactured byMitsubishi Chemical Corporation) as an active ester compound including abenzoylated compound of phenol novolac.

Specific examples of the benzoxazine-based curing agent may include“HFB2006M” manufactured by Showa Highpolymer Co., Ltd., and “P-d” and“F-a” manufactured by Shikoku Chemicals Corporation.

Examples of the cyanate ester-based curing agent may include:bifunctional cyanate resins such as bisphenol A dicyanate, polyphenolcyanate, oligo(3-methylene-1,5-phenylene cyanate),4,4′-methylenebis(2,6-dimethylphenyl cyanate), 4,4′-ethylidenediphenyldicyanate, hexafluorobisphenol A dicyanate,2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane),bis(4-cyanate-3,5-dimethylphenyl)methane,1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cyanatephenyl)thioether, bis (4-cyanatephenyl) ether; polyfunctionalcyanate resins derived from phenol novolac, cresol novolac, and thelike; and prepolymers in which a part of these cyanate resins istriazinated. Specific examples of the cyanate ester-based curing agentmay include “PT30” and “PT60” (both are phenol novolak typepolyfunctional cyanate ester resins) and “BA230” (a prepolymer in whicha part of or whole of bisphenol A dicyanate is triazinated to form atrimer) manufactured by Lonza Japan Co., Ltd.

Specific examples of the carbodiimide-based curing agent may include“V-03” and “V-07” manufactured by Nisshinbo Chemical Inc.

The ratio of the epoxy resin and the curing agent is preferably in arange of 1:0.2 to 1:2, more preferably 1:0.3 to 1:1.5, and furtherpreferably 1:0.4 to 1:1.2 in a ratio of (Total number of epoxy groups inepoxy resin) : (Total number of reactive groups in curing agent). Here,the reactive group of the curing agent means an active hydroxy group, anactive ester group, or the like, and it varies depending on the type ofthe curing agent. The total number of the epoxy groups in the epoxyresin means a value obtained by totaling values obtained by dividing themass of the nonvolatile components of each epoxy resin by the epoxyequivalent for all of the epoxy resins, and the total number of thereactive groups of the curing agent is a value obtained by totalingvalues obtained by dividing the mass of the nonvolatile component ofeach curing agent by the reactive group equivalent for all of the curingagents. By setting the amount ratio of the epoxy resin and the curingagent within such a range, the heat resistance of the cured product ofthe resin composition layer is further improved.

In one embodiment, the resin composition comprises the above-describedinorganic filler, epoxy resin, and curing agent. The resin compositionpreferably comprises silica as the inorganic filler, the liquid epoxyresin and the solid epoxy resin as the epoxy resin (a mass ratio ofliquid epoxy resin: solid epoxy resin is preferably 1:0.1 to 1:5, morepreferably 1:0.3 to 1:4, further preferably 1:0.6 to 1:3, and stillfurther preferably 1:0.8 to 1:2.5), and one or more curing agentsselected from the group consisting of the phenol-based curing agent, thenaphthol-based curing agent, the active ester-based curing agent, andthe cyanate ester-based curing agent as the curing agent (preferably oneor more curing agents selected from the group consisting of thephenol-based curing agent, the naphthol-based curing agent, and theactive ester-based curing agent). With regard to the resin compositioncomprising the specific components in combination, the suitable contentsof the inorganic filler, the epoxy resin, and the curing agent are asdescribed above. In particular, the resin composition preferably has acontent of the inorganic filler of 50% by mass to 95% by mass and acontent of the epoxy resin of 3% by mass to 50% by mass, and morepreferably has a content of the inorganic filler of 50% by mass to 90%by mass and a content of the epoxy resin of 5% by mass to 45% by mass.The curing agent is contained in such a manner that the ratio of thetotal number of the epoxy groups of the epoxy resin to the total numberof the reactive groups of the curing agent is preferably in a range of1:0.2 to 1:2, more preferably in a range of 1:0.3 to 1:1.5, and furtherpreferably in a range of 1:0.4 to 1:1.2.

Thermoplastic Resin

The resin composition may further comprise a thermoplastic resin.Examples of the thermoplastic resin may include a phenoxy resin, apolyvinyl acetal resin, a polyolefin resin, a polybutadiene resin, apolyimide resin, a polyamideimide resin, a polyether sulfone resin, apolyphenylene ether resin, and a polysulfone resin. The thermoplasticresins may be used singly or in combination of two or more of them.

The weight average molecular weight of the thermoplastic resin in termsof polystyrene is preferably in a range of 8,000 to 70,000, morepreferably in a range of 10,000 to 60,000, and further preferably in arange of 20,000 to 60,000. The weight average molecular weight of thethermoplastic resin in terms of polystyrene is measured by a gelpermeation chromatography (GPC) method. Specifically, the weight averagemolecular weight of the thermoplastic resin in terms of polystyrene ismeasured with LC-9A/RID-6A as a measuring apparatus manufactured byShimadzu Corporation, Shodex K-800P/K-804L/K-804L as columnsmanufactured by SHOWA DENKO K. K., and chloroform or the like as amobile phase at a column temperature of 40° C. and calculated using thecalibration curve of the standard polystyrene.

Examples of the phenoxy resin may include phenoxy resins having one ormore types of skeletons selected from the group consisting of abisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, abisphenol acetophenone skeleton, a novolak skeleton, a biphenylskeleton, a fluorene skeleton, a dicyclopentadiene skeleton, anorbornene skeleton, a naphthalene skeleton, an anthracene skeleton, anadamantane skeleton, a terpene skeleton, and a trimethylcyclohexaneskeleton. The terminal of the phenoxy resin may be any functional groupsuch as a phenolic hydroxy group and an epoxy group. The phenoxy resinsmay be used singly or in combination of two or more of them. Specificexamples of the phenoxy resin may include “1256” and “4250” (both arebisphenol A skeleton-containing phenoxy resins), “YX8100” (a bisphenol Sskeleton-containing phenoxy resin), and “YX6954” (abisphenolacetophenone skeleton-containing phenoxy resin) manufactured byMitsubishi Chemical Corporation. Other examples may include “FX280” and“FX293” manufactured by Tohto Kasei Co., Ltd., and “YX7553”,“YX7553BH30”, “YL6794”, “YL7213”, “YL7290”, and “YL7482” manufactured byMitsubishi Chemical Corporation.

Specific examples of the polyvinyl acetal resin may include “DenkaButyral 4000-2”, “5000-A”, “6000-C”, and “6000-E”” manufactured by DenkaCompany Limited, and “S-LEC BH” series, BX series“, “KS series” (forexample, KS-1), “BL series”, and “BM series” manufactured by SekisuiChemical Co., Ltd.

Specific examples of the polyimide resin may include “RIKACOAT SN20” and“RIKACOAT PN20” manufactured by New Japan Chemical Co., Ltd. Specificexamples of the polyimide resin may also include modified polyimidessuch as a linear polyimide obtained by reacting a bifunctional hydroxygroup-terminated polybutadiene, a diisocyanate compound, and atetrabasic acid anhydride (refer to Japanese Patent ApplicationLaid-open No. 2006-37083, which is incorporated herein by reference inits entirety), and a polysiloxane skeleton-containing polyimide (referto Japanese Patent Application Laid-open Nos. 2002-12667 and2000-319386, which is incorporated herein by reference in its entirety).

Specific examples of the polyamideimide resin may include “VylomaxHR11NN” and “Vylomax HR16NN” manufactured by Toyobo Co., Ltd. Specificexamples of the polyamideimide resin may include also modifiedpolyamideimides such as polysiloxane skeleton-containing polyamideimides“KS9100” and “KS9300” manufactured by Hitachi Chemical Co., Ltd.

Specific examples of the polyethersulfone resin may include “PES5003P”manufactured by Sumitomo Chemical Co., Ltd.

Specific examples of the polysulfone resin may include Polysulfone“P1700” and “P3500” manufactured by Solvay Advanced Polymers LLC.

The content of the thermoplastic resin in the resin composition ispreferably 0.1% by mass to 20% by mass. By setting the content of thethermoplastic resin within the range, the viscosity of the resincomposition becomes appropriate and a resin composition having uniformthickness and uniform bulk properties can be formed. The content of thethermoplastic resin in the resin composition is more preferably 0.3% bymass to 10% by mass.

Curing Accelerator

The resin composition may further comprise a curing accelerator.Examples of the curing accelerator may include a phosphorus-based curingaccelerator, an amine-based curing accelerator, an imidazole-basedcuring accelerator, and a guanidine-based curing accelerator. Thephosphorus-based curing accelerator, the amine-based curing accelerator,and the imidazole-based curing accelerator are preferable. The curingaccelerator may be used singly or in combination of two or more of them.

Examples of the phosphorus-based curing accelerator may includetriphenylphosphine, a phosphonium borate compound,tetraphenylphosphonium tetraphenylborate, n-butylphosphoniumtetraphenylborate, tetrabutylphosphonium decanoate,(4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphoniumthiocyanate, and butyltriphenyiphosphonium thiocyanate.Triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

Examples of the amine-based curing accelerator may includetrialkylamines such as triethylamine and tributylamine,4-dimethylaminopyridine, benzyldimethylamine,2,4,6,-tris(dimethylaminomethyl)phenol, and1,8-diazabicyclo(5,4,0)-undecene. 4-Dimethylaminopyridine and1,8-diazabicyclo(5,4,0)-undecene are preferable.

Examples of the imidazole-based curing accelerator may include imidazolecompounds such as 2-methylimidazole, 2-undecylimidazole,2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole,1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole,2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole,1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole,1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole,1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazoliumtrimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-undecylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1′)]-ethyl-s-triazine, a2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuricacid adduct, a 2-phenylimidazole isocyanuric acid adduct,2-phenyl-4,5-dihydroxymethylimidazole,2-phenyl-4-methyl-5-hydroxymethylimidazole,2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole,1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline,and 2-phenylimidazoline; and an adduct of an imidazole compound and anepoxy resin. 2-Ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazoleare preferable.

Examples of the guanidine-based curing accelerator may includedicyandiamide, 1-methylguanidine, 1-ethylguanidine,1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine,dimethylguanidine, diphenylguanidine, trimethylguanidine,tetramethylguanidine, pentamethylguanidine,1,5,7-triazabicyclo[4.4.0]dec-5-ene,7-methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide,1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide,1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide,1-allylbiguanide, 1-phenylbiguanide, and 1-(o-tolyl)biguanide.Dicyandiamide and 1,5,7-triazabicyclo[4.4.0]dec-5-ene are preferable.

The content of the curing accelerator in the resin composition is notparticularly limited and is preferably 0.05% by mass to 3% by mass whenthe total amount of the nonvolatile components of the epoxy resin andthe curing agent are determined to be 100% by mass.

Other Components

The resin composition may comprise additives as other components, ifnecessary. Examples of the additives may include organometalliccompounds such as organocopper compounds, organozinc compounds, andorganocobalt compounds, organic fillers such as rubber particles, andresin additives such as thickeners, defoaming agents, leveling agents,adhesion imparting agents, flame retardants, and coloring agents.

The minimum melt viscosity of the resin composition layer according tothe present invention is not particularly limited and is preferably 300poise or more, more preferably 500 poise or more, 700 poise or more, 900poise or more, or 1,000 poise or more from the viewpoint of reducingexudation of the resin composition. The upper limit of the minimum meltviscosity of the resin composition layer is preferably 20,000 poises orless, more preferably 10,000 poises or less, further preferably 8,000poises or less, 7,000 poises or less, 6,000 poises or less, 5,000 poiseor less, or 4,000 poise or less from the viewpoint of achievingexcellent laminating properties.

In order to form further finer wirings, higher embeddability isrequired. In order to improve the embeddability, lowering the minimummelt viscosity of the resin composition is effective. However, loweringthe minimum melt viscosity increases the amount of exudation of theresin composition. It can be said that formation of the raised part dueto expansion of the support becomes more significant when the amount ofexudation of the resin composition is increased. However, in the resincomposition layer according to the present invention, even when theresin composition layer has a relatively low minimum melt viscositywhich may form the raised part more easily, that is, even when theminimum melt viscosity is 4,000 poise or less, or furthermore 3,400poise or less, the formation of the raised part can be effectivelyreduced and the yield of the printed wiring board having excellentembeddability can be further improved.

Under the heating conditions “temperature is raised from 20° C. to 100°C. at a rate of temperature rise of 8° C./min and heating is carried outat 100° C. for 30 minutes, and thereafter the temperature is raised to180° C. at a rate of temperature rise of 8° C./min and heating iscarried out at 180° C. for 30 minutes” described above, the raised partthus formed can be flattened in a self-alignment manner by melting theresin composition when the insulating layer is formed by curing.Therefore, the minimum melt viscosity of the resin composition layer ispreferably 10,000 poises or less when the expansion coefficient of thesupport in the TD direction is 0 (%) or less, and minimum melt viscosityof the resin composition layer is preferably 10,000 poise or less whenthe expansion coefficient of the support in the MD direction is 0 (%) orless. The minimum melt viscosity of the resin composition layer is morepreferably 8,000 poises or less when the expansion coefficient of thesupport in the TD direction is 0 (%) or less, and minimum melt viscosityof the resin composition layer is more preferably 8,000 poise or lesswhen the expansion coefficient of the support in the MD direction is 0(%) or less. The minimum melt viscosity of the resin composition layeris further preferably 4,000 poises or less when the expansioncoefficient of the support in the TD direction is 0 (%) or less, andminimum melt viscosity of the resin composition layer is furtherpreferably 4,000 poise or less when the expansion coefficient of thesupport in the MD direction is 0 (%) or less.

The “minimum melt viscosity” of the resin composition layer means aminimum viscosity exhibited by the resin composition layer when theresin of the resin composition layer is melted. In detail, when theresin composition layer is heated at a constant rate of temperature riseto melt the resin, the melt viscosity decreases with an increase intemperature at the initial stage. Thereafter, when the temperatureexceeds a certain level, the melt viscosity increases with temperaturerise. The “minimum melt viscosity” means the melt viscosity of such alocal minimum point. The minimum melt viscosity and the minimum meltviscosity temperature of the resin composition layer can be measured bya dynamic viscoelasticity method.

The thickness of the resin composition layer is not particularly limitedand is preferably 5 μm to 100 μm, more preferably 10 μm to 90 μm, andfurther preferably 15 μm to 80 μm from the viewpoint of thinning theprinted wiring board.

In the present invention, the expansion coefficient of the support atless than 120° C. is not particularly limited, and the support may havea certain expansion coefficient exceeding 0% on condition that theobject of the present invention is not impaired. This is because even ifthe support expands at a temperature less than 120° C. to form a raisedpart, the formed raised part can be flattened in a self-aligned mannerby melting the resin composition layer when the expansion coefficient ofthe support becomes 0% or less later. In order to obtain thisself-aligning flattening effect, however, the expansion coefficient atless than 120° C. is preferably 2% or less.

The adhesive sheet can be produced by, for example, preparing a resinvarnish by dissolving a resin composition in an organic solvent,applying the resin varnish onto the support using a die coater or thelike, and drying the applied resin varnish to form a resin compositionlayer.

Examples of the organic solvent may include: ketones such as acetone,methyl ethyl ketone (MEK), and cyclohexanone; acetic acid esters such asethyl acetate, butyl acetate, cellosolve acetate, propylene glycolmonomethyl ether acetate, and carbitol acetate; carbitols such ascellosolve and butyl carbitol; aromatic hydrocarbons such as toluene andxylene; and amide solvents such as dimethylformamide, dimethylacetamide,and N-methylpyrrolidone. The organic solvents may be used singly or incombination of two or more of them.

The drying may be carried out by a known method such as heating or hotair blowing. Drying conditions are not particularly limited and thedrying is carried out so that the content (residual solvent amount) ofthe organic solvent in the resin composition layer is 10% by mass orless and preferably 5% by mass or less. From the viewpoint of improvingthe handleability of the resin composition layer and preventing anincrease in the melt viscosity when the resin composition is formed intoan adhesive sheet, the residual solvent amount is preferably 0.5% bymass or more, more preferably 1% by mass or more. Depending on theboiling point of the organic solvent in the resin varnish, when a resinvarnish containing, for example, 30% by mass to 60% by mass of theorganic solvent is used, the resin composition layer can be formed bydrying at 50° C. to 150° C. for 3 minutes to 10 minutes.

In the adhesive sheet, a protection film that is a film similar to thesupport described above can be further laminated on the surface of theresin composition layer not bonded to the support of the resincomposition layer (that is, the surface opposite to the support). Thethickness of the protection film is not particularly limited and is, forexample, 1 μm to 40₁1m. Lamination of the protection film serves toprevent adhesion of dust and the like and scratches to the surface ofthe resin composition layer. The adhesive sheet can be rolled up andstored. In manufacturing of the printed wiring board, the adhesive sheetcan be used by peeling off the protection film.

Method for Manufacturing Printed Wiring Board

The method for manufacturing the printed wiring board of the presentinvention comprises Steps (A) to (C) in this order:

Step (A) of laminating an adhesive sheet comprising a support and aresin composition layer bonded to the support to an inner layer board sothat the resin composition layer is bonded to the inner layer board;

Step (B) of thermally curing the resin composition layer to form aninsulating layer; and

Step (C) of removing the support,

the support preferably satisfies the following condition (MD1) andcondition (TD1) when it is heated under the following heatingconditions.

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes.

Condition (MD1): a maximum expansion coefficient E_(MD) (%) in an MDdirection at 120° C. or more is less than 0.2%.

Condition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%.

In the method for manufacturing a printed wiring board, the support morepreferably satisfies the following condition (MD2) and condition (TD2).

Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%.

Condition (TD2: the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.

Further, a method for manufacturing a printed wiring board preferablySteps (A) to (C):

Step (A) of laminating an adhesive sheet comprising a support and aresin composition layer bonded to the support to an inner layer board sothat the resin composition layer is bonded to the inner layer board;

Step (B) of thermally curing the resin composition layer to form aninsulating layer; and

Step (C) of removing the support, in this order,

wherein the support preferably satisfies the following condition (MD3)and condition (TD3) when it is heated under the following heatingconditions.

Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes.

Condition (MD3): a temperature at which an expansion coefficient in anMD direction becomes maximum is less than 120° C.

Condition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.

In Step (B), the support preferably satisfies

Condition (MD4): a temperature at which the expansion coefficient of thesupport in the MD direction becomes maximum is less than 120° C. and

Condition (TD4): a temperature at which the expansion coefficient of thesupport in the TD direction becomes maximum is less than 120° C.

In the heating condition of the method for manufacturing a printedwiring board described above, the minimum melt viscosity of the resincomposition layer is preferably 10,000 poises or less when the expansioncoefficient of the support in the TD direction is 0 (%) or less, andminimum melt viscosity of the resin composition layer is preferably10,000 poise or less when the expansion coefficient of the support inthe MD direction is 0 (%) or less.

In the present invention, the phrase “comprise in this order” in any ofStep (A) to Step (C) means that other step may be comprised as long asthe method comprises each step of Step (A) to Step (C) and each step ofStep (A) to Step (C) is carried out in this order.

Hereinafter, the phrase “comprise in this order” in any steps orprocedures has the same meaning. Step (A)

In Step (A), an adhesive sheet comprising a support and a resincomposition layer bonded to the support is laminated to an inner layerboard so that the resin composition layer is bonded to the inner layerboard.

The adhesive sheet used in Step (A) is as described in the above“Adhesive sheet”. As described above, the adhesive sheet comprises thesupport satisfying the condition (MD1) and the condition (TD1), thecondition (MD2) and the condition (TD2), or the condition (MD3) and thecondition (TD3), or satisfying the condition (MD4) and the condition(TD4) at the time of heating under the heating conditions (Heatingconditions).

The “inner layer board” used in Step (A) mainly means a board such as aglass epoxy board, a metal board, a polyester board, a polyimide board,a BT resin board, and a thermoset type polyphenylene ether board or acircuit board with which a patterned conductor layer (a circuit) isformed on one surface or both surfaces of the above-described board. Alaminated structure that is an intermediate product onto which aninsulating layer and/or a conductor layer is to be further formed at thetime of manufacturing the printed wiring board is also comprised in the“inner layer board” of the present invention.

Lamination (bonding) of the inner layer board and the adhesive sheet canbe carried out by, for example, thermally compressing and bonding theadhesive sheet to the inner layer board from the support side. Examplesof members for thermally compressing and bonding the adhesive sheet tothe inner layer board (hereinafter also referred to as “thermallycompressing and bonding member”) may include a heated metal plate (SUSmirror plate or the like) and a metal roll (SUS roll). Here, it ispreferable that the thermally compressing and bonding member is notpressed directly on the adhesive sheet but is pressed through an elasticmaterial such as heat resistant rubber so that the adhesive sheetsufficiently follows the surface unevenness of the inner layer board.

Temperature at the time of thermal compressing and bonding is preferablyin a range of 80° C. to 160° C., more preferably in a range of 90° C. to140° C., and further preferably in a range of 100° C. to 120° C.Pressure at the time of the thermal compressing and bonding ispreferably in a range of 0.098 MPa to 1.77 MPa and more preferably in arange of 0.29 MPa to 1.47 MPa. The time of the thermal compressing andbonding is preferably in a range of 20 seconds to 400 seconds and morepreferably in a range of 30 seconds to 300 seconds. The bonding of theadhesive sheet and the inner layer board is preferably carried out undera reduced pressure condition at a pressure of 26.7 hPa or less.

The bonding of the adhesive sheet and the inner layer board can becarried out with a commercially available vacuum laminator. Examples ofthe commercially available vacuum laminators may include a vacuumpressurized laminator manufactured by MEIKI CO., LTD. and a vacuumapplicator manufactured by Nichigo-Morton Co., Ltd.

For example, after the bonding of the adhesive sheet and the inner layerboard, the laminated adhesive sheet may be subjected to smoothingtreatment under a normal pressure (under atmospheric pressure) bypressing the thermally compressing and bonding member from the supportside. Conditions similar to the thermal compressing and bondingconditions for the lamination can be used for the pressing conditions inthe smoothing treatment. The smoothing treatment can be carried out by acommercially available laminator. The lamination and the smoothingtreatment may be carried out successively using the commerciallyavailable vacuum laminator.

Step (B)

In Step (B), the resin composition layer is thermally cured to form theinsulating layer.

The conditions of thermal curing are determined in consideration of theproperties of the selected support and the properties of the resincomposition layer. Conditions generally employed at the time of formingthe insulating layer of the printed wiring board may be applied.

The thermal curing conditions of the resin composition layer varydepending on the composition of the resin composition and, for example,the curing temperature is in a range of 120° C. to 240° C. or 150° C. to240° C. (preferably 155° C. to 230° C., more preferably 160° C. to 220°C., further preferably 170° C. to 210° C., and further more preferably180° C. to 200° C.). The curing time is in a range of 5 minutes to 100minutes (preferably 10 minutes to 80 minutes and more preferably 10minutes to 50 minutes). The curing conditions also may be determined inconsideration of conditions for flattening the resin composition layerin a self-aligned manner by melting. The thermal curing may be carriedout under any of the normal pressure, the reduced pressure, and theincreased pressure.

Step (B) suitably comprises a step of thermally curing the resincomposition layer at a temperature T₂ higher than a temperature T₁ afterheating the resin composition layer at the temperature T₁.

In a suitable embodiment, Step (B) comprises

(i) a step of heating the resin composition layer at the temperature T₁(50° C.≦T₁≦150° C.) and

(ii) a step of thermally curing the resin composition layer at thetemperature T₂ (150° C.≦T2≦240° C.) after the step of heating.

In the step (i), the temperature T₁ preferably satisfies 60° C.≦T₁≦130°C., more preferably 70° C. T₁≦120° C., further preferably 80° C.≦T₁≦110°C., and further more preferably 80° C.≦T₁≦100° C. although it depends onthe composition of the resin composition layer.

Retention time at the temperature T₁ is preferably 10 minutes to 150minutes, more preferably 15 minutes to 120 minutes, and furtherpreferably 20 minutes to 120 minutes, although it depends on the valueof the temperature of T₁.

The heating in the step (i) may be carried out under the normalpressure, carried out under the reduced pressure, or carried out underthe increased pressure, and preferably carried out under a pressure in arange of 0.075 mmHg to 3751 mmHg (0.1 hPa to 5,000 hPa) and morepreferably in a range of 1 mmHg to 1875 mmHg (1.3 hPa to 2,500 hPa).

In the step (ii), the temperature T₂ preferably satisfies 155°C.≦T₂≦230° C., more preferably 160° C.≦T₂≦220° C., further preferably170° C.≦T₂≦210° C., and further more preferably 180° C.≦T₂≦200° C.,although it depends on the composition of the resin composition layer.

The temperature T_(i) and the temperature T₂ preferably satisfy therelation of 20° C.≦T₂−T₁≦150° C., more preferably 30° C.≦T₂−T₁≦140° C.,further preferably 40° C.≦T₂−T₁≦130° C., and particularly preferably 50°C.≦S T₂−T₁≦120° C.

Time for thermal curing is preferably 5 minutes to 100 minutes, morepreferably 10 minutes to 80 minutes, and further preferably 10 minutesto 50 minutes, although it depends on the value of the temperature ofT₂.

The thermal curing in the step ii) may be carried out under the normalpressure, the reduced pressure, and the increased pressure. The thermalcuring is preferably carried out under a pressure similar to thepressure in the heating step.

After the heating in the step i), the resin composition layer may beallowed to radiate heat once and then the thermal curing of the step ii)may be carried out. Alternatively, after the heating in the step i), thethermal curing may be carried out in the step ii) without heat radiationfrom the resin composition layer. In a preferable embodiment, Step (B)further comprises a step of raising temperature from the temperature T₁to the temperature T₂ between the heating in the step i) and the thermalcuring in the step ii). In such an embodiment, the rate of temperaturerise from the temperature T₁ to the temperature T₂ is preferably 1.5°C./min to 30° C./min, more preferably 2° C./min to 30° C./min, furtherpreferably 4° C./min to 20° C./min, further more preferably from 4°C./min to 10° C./min. Thermal curing of the resin composition layer maybe started during the temperature rise.

Step (C)

In Step (C), the support is removed.

The support can be removed by peeling by a conventionally known andappropriately suitable method, and it may be removed by peeling using anautomatic peeling device. By carrying out this Step (C), the surface ofthe formed insulating layer is exposed.

At the time of manufacturing the printed wiring board, Step (D) ofdrilling the insulating layer, Step (E) of roughening the insulatinglayer, and Step (F) of forming the conductor layer on the surface of theinsulating layer may be further carried out. These Steps (D) to (F) maybe carried out in accordance with various methods known to those skilledin the art used for manufacturing printed wiring boards.

Step (D) is a step of drilling the insulating layer, whereby holes suchas via holes and through holes can be formed in the insulating layer.The drilling step may be carried out using, for example, a drill, laser(carbon dioxide gas laser, YAG laser, and the like), plasma, or thelike. Step (D) may be carried out between Step (B) and Step (C) or maybe carried out after Step (C).

Step (E) is a step of roughening the insulating layer. The proceduresand conditions of the roughening treatment is not particularly limitedand known procedures and conditions generally used for forming theinsulating layer of the printed wiring board can be employed. Step (E)can be a step of roughening the insulating layer by carrying out theroughening treatment by, for example, swelling treatment with a swellingliquid, roughening treatment with an oxidizing agent, and neutralizationtreatment with a neutralizing liquid in this order. The swelling liquidis not particularly limited. Examples of the swelling liquid may includean alkaline solution and a surfactant solution. The alkaline solution ispreferable, and a sodium hydroxide solution and a potassium hydroxidesolution are more preferable as the alkaline solution. Examples of thecommercially available swelling liquid may include “Swelling DipSecuriganth P” and “Swelling Dip Securiganth SBU” manufactured byAtotech Japan K. K. The swelling treatment with the swelling liquid isnot particularly limited and can be carried out by, for example,immersing the insulating layer into a swelling liquid at 30° C. to 90°C. for 1 minute to 20 minutes. The oxidizing agent is not particularlylimited. Examples of the oxidizing agent may include an alkalinepermanganic acid solution prepared by dissolving potassium permanganateor sodium permanganate in an aqueous solution of sodium hydroxide. Theroughening treatment with the oxidizing agent such as the alkalinepermanganic acid solution is preferably carried out by immersing theinsulating layer in the oxidizing agent solution heated to 60° C. to 80°C. for 10 minutes to 30 minutes. The concentration of a permanganatesalt in the alkaline permanganate solution is preferably 5% by mass to10% by mass. Examples of commercially available oxidizing agents mayinclude alkaline permanganic acid solutions such as “Concentrate CompactCP” and “Dosing Solution Securiganth P” manufactured by Atotech Japan K.K. As the neutralizing liquid, an acidic aqueous solution is preferable.Examples of commercially available products may include “ReductionSolution Securiganth P” manufactured by Atotech Japan K. K. Treatmentwith the neutralizing liquid can be carried out by immersing the treatedsurface subjected to the roughening treatment with the oxidizing agentsolution into the neutralizing liquid at 30° C. to 80° C. for 5 minutesto 30 minutes.

Step (F) is a step of forming a conductor layer on the surface of theinsulating layer.

The conductor material used for the conductor layer is not particularlylimited. In a preferable embodiment, the conductor layer comprises oneor more metals selected from the group consisting of gold, platinum,palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel,titanium, tungsten, iron, tin, and indium. The conductor layer may be asingle metal layer or an alloy layer. Examples of the alloy layer mayinclude a layer formed of an alloy of two or more metals selected fromthe above group (for example, a nickel-chromium alloy, a copper-nickelalloy, and a copper-titanium alloy). Among them, from the viewpoints ofeasy formation of the conductor layer, cost and easy patterning, thesingle metal layer of chromium, nickel, titanium, aluminum, zinc, gold,palladium, silver, or copper or the alloy layer of a nickel-chromiumalloy, a copper-nickel alloy, or a copper-titanium alloy is preferable,the single metal layer of chromium, nickel, titanium, aluminum, zinc,gold, palladium, silver, or copper or the alloy layer of anickel-chromium alloy is more preferable, and the single metal layer ofcopper is further preferable.

The conductor layer may have a single layer structure or a multilayerstructure formed by laminating two or more layers of single metal layersor alloy layers made of different types of metals or alloys. When theconductor layer has a multilayer structure, the layer in contact withthe insulating layer is preferably the single metal layer of chromium,zinc, or titanium or the alloy layer of nickel-chromium alloy.

The thickness of the conductor layer is generally 3 μm to 35 μm andpreferably 5 μm to 30 μm, depending on the design of the desired printedwiring board.

The conductor layer may be formed by plating. For example, the conductorlayer having a desired wiring pattern can be formed by plating thesurface of the insulating layer by a conventionally known technique suchas a semi-additive method and a full additive method. Hereinafter, theexample of formation of the conductor layer by the semi-additive methodwill be described.

First, a plating seed layer is formed on the surface of the insulatinglayer by electroless plating. Subsequently, a mask pattern for exposinga part of the plating seed layer corresponding to a desired wiringpattern is formed on the formed plating seed layer. A metal layer isformed on the exposed plating seed layer by electrolytic plating, andthereafter the mask pattern is removed. Thereafter, the unnecessaryplating seed layer is removed by etching or the like. Thus, theconductor layer having a desired wiring pattern can be formed.

Semiconductor Device

By using the printed wiring board obtained by the manufacturing methodof the present invention, a semiconductor device comprising such aprinted wiring board can be manufactured.

Examples of the semiconductor device may include various semiconductordevices provided for electric products (for example, computers, mobilephones, digital cameras, and televisions) and vehicles (for example,motorcycles, automobiles, trains, ships, and aircraft).

Laminated Structure

The laminated structure of the present invention is a laminatedstructure comprising the inner layer board, an insulating layer providedon the inner layer board, and a support bonded to the insulating layer.When the thickness of the central part of the insulating layer isdetermined to be t (μm), the thickness of the insulating layer includingthe raised part outside the central part is 2.5t (μm) or less. Here, thethickness preferably satisfies t 40 (μm).

The laminated structure comprises an inner layer board, an insulatinglayer provided on the inner layer board, and a support bonded to theinsulating layer, in which a difference in height between a lowest pointand a highest point is preferably 60 μm or less. At the lowest point, aheight of the insulating layer that is a height from an interfacebetween the insulating layer and the inner layer board to an interfacewhere the insulating layer and the support are bonded is the lowest, andat the highest point, the height of the insulating layer is the highest.

The laminated structure of the present invention is a laminatedstructure comprising an inner layer board, an insulating layer providedon the inner layer board, and a support bonded to the insulating layer,in which the highest point of the raised part of the insulating layer towhich the support is bonded is at the position lower than the height ofthe surface of the support. Here, “the surface of the support” means asurface opposite to the surface where the insulating layer is bonded tothe support.

With reference to FIGS. 4 and 5, a configuration example of thelaminated structure of the present invention will be described.

FIG. 4 is a schematic plan view of the laminated structure. FIG. 5 is aschematic view illustrating an end face cut along the position of theIII-III dot-and-dash line of the laminated structure in FIG. 4.

As illustrated in FIGS. 4 and 5, a laminated structure 10 has an innerlayer board 30, an insulating layer 24 provided on the inner layer board30, and a support 22 bonded to the insulating layer 24.

In the laminated structure 10, the insulating layer 24 formed on theinner layer board 30 means an insulating layer newly formed with theadhesive sheet described above. The insulating layer 24 in the laminatedstructure 10 is not limited to only one layer but may include an aspectin which two or more insulating layers 24 are laminated on one surfaceside of the inner layer board 30. When the laminated structure 10 hastwo or more insulating layers, at least one of the two or moreinsulating layers may be formed by the steps of laminating the adhesivesheet comprising the support 22 having the properties described aboveonto the inner layer board 30, thermally curing the resin compositionlayer, and thereafter peeling off the support 22 to remove the support22. In the laminated structure 10, when the thickness of the insulatinglayer 24 at the central part 10A of the laminated structure 10 isdetermined to be t (μm), the thickness of the insulating layer 24including the raised part 10C outside the central part 10A is 2.5t (μm)or less. Here, the thickness preferably satisfies t≦40 (μm).

The “central part 10A” described here means a region in which thethickness t of the insulating layer 24 overlapping (is overlapped with)the support 22 is substantially uniform when the laminated structure 10is viewed in the thickness direction from which the region included inthe “end part 10B” positioned on both sides in the TD direction isexcluded.

The “end part 10B” means a region in which the insulating layer 24overlaps (is overlapped with) the support 22 when the laminatedstructure 10 is viewed in the thickness direction and a region includinga border between the support 22 and the insulating layer 24 exposed fromthe support 22 in TD direction, that is, a linear region having a widthof about 50 mm from the edge part 22 a in the TD direction of thesupport 22 toward the support 22 side and a region outside the edge part22 a in the TD direction of the support 22 and in the vicinity of theedge part 22 a where the raised part 10C may be formed.

The thickness t of the central part 10A of the insulating layer 24 is adistance (height) from the surface of the insulating layer 24 (theinterface being the bonding surface with the support 22) to theinterface on the member (for example, the inner layer board 30) to whichthe insulating layer 24 is bonded. When the conductor layer is providedin the inner layer board 30 and particularly the thickness of theinsulating layer 24 on the conductor layer is significantly smaller thanthe thickness of the insulating layer 24 on the surface of the innerlayer board 30 where the conductor layer does not exist, the distancemay be a distance from the surface of the insulating layer 24 to thesurface of the inner layer board 30 where the conductor layer does notexist. When the difference between the thickness of the insulating layer24 on the conductor layer and the thickness of the insulating layer 24on the surface of the inner layer board 30 where the conductor layerdoes not exist is negligibly small, the distance may be a distance fromthe surface of the insulating layer 24 to the interface with theconductor layer.

The thickness t of the central part 10A of the insulating layer 24 maybe any suitable thickness in accordance with the design. The thickness tof the central part 10A of the insulating layer 24 is preferably 40 μmor less, more preferably 10 μm or more and 30 μm or less from theviewpoint of forming a thinner printed wiring board.

At the end part of the conventional insulating layer, the insulatinglayer is pushed by the support due to the expansion of the support inthe thermal curing step in the vicinity of the edge part in the TDdirection and in the vicinity of the edge part in the MD direction, sothat the insulating layer may run on the support, or a raised partexceeding the thickness of the support may be formed.

In the laminated structure 10 according to the present invention, theraised part 10C does not exist at the end part 10B in the TD directionof the insulating layer 24, or the highest point HP of the raised part10C of the insulating layer 24 does not exceed the height of the surface22 b of the support 22, in other words, the highest point HP of theraised part 10C of the insulating layer 24 is at a position lower thanthe height of the surface 22 b of the support 22.

Therefore, even when the thickness of the insulating layer 24 at the endpart 10B, that is, the thickness t₀ of the insulating layer 24 includingthe raised part 10C may be thicker than the thickness t of the centralpart 10A due to formation of the raised part 10C, the thickness t₀ maybe acceptable when the highest point HP of the raised part 10C is at aposition lower than the height of the surface 22 b of the support 22.

When the thickness of the support 22 is determined to be t_(s) and thethickness of the insulating layer 24, that is, the thickness of thecentral part 10A of the insulating layer 24 is determined to be t (m),considering the flatness of the insulating layer 24, the thickness t₀ ofthe thickest part (raised part 10C) at the end part 10B of theinsulating layer 24 is 2.5t (μm) or less, preferably at most 100 μm,more preferably at most 70 μm. In other words, t+t_(s)>t₀ is preferable.When the height from the interface with the member to which theinsulating layer 24 is bonded (for example, the inner layer board) tothe surface of the insulating layer 24 (the surface (interface) to bebonded to the support) is determined as a standard, the differencebetween the heights of the lowest point LP (the central part 10A) havingthe lowest height of the insulating layer 24 and the highest point HP(the end part 10B) having the highest height of the insulating layer isat most 60 μm, that is, preferably 60 μm or less. The difference is morepreferably at most 50 μm, that is, 50 μm or less and further preferablyat most 30 μm, that is, 30 μm or less.

The thicknesses t and t₀ of the insulating layer 24 can be determined bySEM observation of the cross section in the thickness direction of theinsulating layer 24 obtained in Step (C). Examples of focused ionbeam/scanning ion microscopes that can be used for SEM observationinclude “S-4800” manufactured by Hitachi High-Technologies Corporationand “SMI3050SE” manufactured by SII Nanotechnology Co., Ltd.

Other features of the invention will become apparent in the course ofthe following descriptions of exemplary embodiments which are given forillustration of the invention and are not intended to be limitingthereof.

EXAMPLES

In the following description, “part” and “%” mean “part by mass” and “%by mass”, respectively, unless otherwise specified.

First, the method of measurement and evaluation will be described.

Preparation of Sample for Measurement and Evaluation

(1) Preparation of Inner Layer Board

A glass cloth substrate epoxy resin double-sided copper clad laminateboards (“R1515A”, manufactured by Panasonic Electric Works Co., Ltd.,thickness of copper layer is 18 μm and thickness of board is 0.8 mm) wasprepared as the inner layer board. Both surfaces of the inner layerboard were immersed in “CZ8100” manufactured by MEC Co., Ltd. to carryout roughening treatment of the surfaces of the copper layers.

(2) Lamination of Adhesive Sheet

The adhesive sheets prepared in Examples and Comparative Examples below

were laminated to both surfaces of the inner layer board using a batchtype vacuum pressure laminator (“MVLP-500”, manufactured by MEIKI CO.,LTD.) so that the resin composition layer is bonded to the inner layerboard. The lamination treatment was carried out by depressurizing for 30seconds to adjust a gas pressure to 13 hPa or less and thereaftercompressing and bonding at 100° C. under a pressure of 0.74 MPa for 30seconds. The adhesive sheet was used after the protection film is peeledoff.

(3) Thermal Curing of the Resin Composition Layer

After the lamination of the adhesive sheet, the resin composition layerwas thermally cured with the attached support under heating conditionsof 100° C. (temperature T₁) for 30 minutes and then 180° C. (temperatureT₂) for 30 minutes to form an insulating layer. The thickness of theobtained insulating layer just above the copper layer was 40 μm. Theobtained structure is referred to as an evaluation board A.

(4) Formation of Second Insulating Layer

After the support was peeled off from the evaluation board A obtained inthe above (3), an adhesive sheet having the same size as the curedinsulating layer was repeatedly laminated and cured in the same manneras in the above (2) and (3) to form a second insulating layer. The totalthickness of the first insulating layer and the second insulating layerjust above the copper layer was 80 _(l)am. The obtained structure isreferred to as an evaluation board B.

Measurement of Expansion Coefficient of Support Measurement of ExpansionCoefficient of Support in TD Direction

Rectangular specimens having a size of 20 mm (short side)×4 mm (longside) of the supports prepared in Examples and Comparative Examplesdescribed below were cut out so that the TD direction of the supportswas in the direction along the long side. Expansion coefficients of thetest specimen through the entire process of heat treatment were measuredusing the thermomechanical analyzer (“TMA-SS6100”, manufactured by SeikoInstruments Inc.) in a tensile test mode under the air atmosphere at atensile load of 9.8 mmN under the following heating conditions. Themaximum expansion coefficient E_(TD) at 100° C. or more, the maximumexpansion coefficient E_(TD) at 120° C. or more, the maximum expansioncoefficient E_(TD) at less than 120° C., and the temperature T_(TD) atwhich expansion coefficient become negative values from a positivevalue, in other words, the temperature T_(TD) at which the expansioncoefficient becomes 0 (%) were determined.

Heating conditions: temperature is raised from 20° C. to 100° C.(temperature T₁) at a rate of temperature rise of 8° C./min and heatingis carried out at 100° C. for 30 minutes, and thereafter the temperatureis raised to 180° C. (temperature T₂) at a rate of temperature rise of8° C./min and heating is carried out at 180° C. for 30 minutes.

Measurement of Expansion Coefficient of Support in MD Direction

Rectangular specimens having a size of 20 mm×4 mm of the supportsprepared in Examples and Comparative Examples described below were cutout so that the MD direction of the supports was in the direction alongthe long side. Similar to “Measurement of expansion coefficient ofsupport in TD direction”, for the test specimen, the maximum expansioncoefficient E_(MD) at 100° C. or more, the maximum expansion coefficientE_(MD) at 120° C. or more, the maximum expansion coefficient E_(MD) atless than 120° C., and the temperature T_(MD) at which expansioncoefficient become negative values from a positive value, in otherwords, the temperature T_(MD) at which the expansion coefficient becomes0 (%) were determined.

Measurement of Minimum Melt Viscosity

With respect to the resin composition layers of the adhesive sheetsprepared in the following Examples and Comparative Examples, the meltviscosities were measured using a dynamic viscoelasticity measuringapparatus (“Rheosol-G3000” manufactured by U-BM Co., Ltd.). The dynamicviscoelasticity was measured under conditions of a measurementtemperature interval of 2.5° C., a frequency of 1 Hz, and a strain of 1deg by using a parallel plate having a diameter of 18 mm for 1 g of theresin composition as a sample and raising a temperature at a temperaturerise rate of 5° C./min from an initial temperature of 60° C. to 200° C.to determine the minimum melt viscosity (poise). The minimum meltviscosities (poise) of the resin composition layer at temperatureshigher than T_(TD) and T_(MD) were also confirmed.

Measurement of Height of Highest Point of Raised Part

The shape of the end part of the insulating layer was observed accordingto the following procedure. SEM observation of the cross-sectionalsurfaces formed by cutting the insulating layer in the TD direction andthe MD direction was carried out for the insulating layer raised in thevicinity of the end part in the TD direction and in the vicinity of theend part in the MD direction of the support. The distance (height) fromthe lowest part of the insulating layer, that is, the surface of theinner layer board to the highest point of the raised part being thesurface of the insulating layer was calculated. SEM observation wascarried out using “S-4800” manufactured by Hitachi High-TechnologiesCorporation. The height of the highest point of the raised part wasmeasured for the evaluation boards A and B.

Evaluation of Insulating Layer in the Vicinity of End Part of Support

The observation of the insulating layer in the vicinity of the end partof the support was visually observed in a similar manner to the aboveSEM observation. With respect to the insulating layer raised in thevicinity of the end parts in the TD direction and in the vicinity of theedge part in the MD direction of the support, the case where the highestpoint of the part raised (raised part) in the vicinity of each edge partdid not exceed the height of the surface of the support was determinedto be “Good: ◯”, whereas the case where the highest point of the raisedpart exceeded the height of surface of the support or the highest pointwas above the surface of the support, that is, the insulating layer ranon the surface of the support, was determined to be “Disapproved: ×”.

Evaluation of Winkles and Lifting of Support

The wrinkles and lifting of the support were visually observed. Theevaluation criteria are as follows.

Evaluation Criteria

Wrinkles and lifting are not generated at the end part of the supportafter formation of the insulating layer: ◯(Good)

Wrinkles and lifting are generated at the end part of the support afterformation of the insulating layer: × (Disapproved)

Evaluation of Resin Chip Adhesion

Observation of resin chip adhesion generated on the insulating layer inthe vicinity of the end part of the support was carried out by peelingoff the support and thereafter observing the support with SEM.

Evaluation criteria

No resin chip adhesion having a height of 5 μm or more exists on thesurface in the vicinity of the end part of the support after formationof the insulating layer: ◯ (Good)

The resin chip adhesion having a height of 5 μm or more exists on thesurface in the vicinity of the end part of the support after formationof the insulating layer: × (Disapproved)

Preheating Conditions

The preheating conditions employed at the time of preparation of thesupport in the following Examples and Comparative Examples are listed inTable 1 below. In Table 1, “Tension” means a tension applied in the TDdirection of the support.

TABLE 1 Preheating conditions 1 2 3 4 5 6 Heating 130 130 130 170 150130 Temperature (° C.) Heating time (min) 30 30 30 10 30 30 Tension(gf/cm²) 20 10 5 2 20 20

Example 1 (1) Preparation of Support

An alkyd resin-based releasing layer-attached PET film (“AL5”,manufactured by Lintec Corporation, thickness 38 μm, hereinafterreferred to as “release PET film”) was fixed at the edge of one side inthe TD direction so that the TD direction of the PET film was in adirection along the vertical direction to suspend the PET film so that auniform tension was applied to the entire PET film. Thereafter, a metalplate was attached as a weight at the edge of the other side in the TDdirection so that a uniform tension was applied to the entire PET film.At this time, the weight of the metal plate was adjusted so that atension of 20 gf/cm² was applied. A support was obtained by preheatingtreatment under the air atmosphere and normal pressure while applyingtension under the heating temperature and the heating time of thepreheating condition 1 in Table 1.

(2) Preparation of Resin Varnish A

30 parts of a biphenyl type epoxy resin (epoxy equivalent about 290,“NC3000H”, manufactured by Nippon Kayaku Co., Ltd.), 5 parts of anaphthalene type tetrafunctional epoxy resin (epoxy equivalent 162,“HP-4700”, manufactured by DIC Corporation), 15 parts of a liquidbisphenol A type epoxy resin (epoxy equivalent 180, “jER828EL”,manufactured by Mitsubishi Chemical Corporation), and 2 parts of phenoxyresin (weight average molecular weight 35000, “YX7553BH30”, manufacturedby Mitsubishi Chemical Corporation, a methyl ethyl ketone (MEK) solutionhaving a nonvolatile component of 30% by mass) were heated and dissolvedin a mixed solvent of 8 parts of MEK and 8 parts of cyclohexanone withstirring. To this solution, 32 parts of a triazine skeleton-containingphenol novolak-based curing agent (phenolic hydroxyl equivalent about124, “LA-7054”, manufactured by DIC Corporation, a MEK solution having anonvolatile component of 60% by mass), 0.2 parts of a phosphorus-basedcuring accelerator (“TBP-DA”, manufactured by Hokko Chemical IndustryCo., Ltd., tetrabutylphosphonium decanoate), 160 parts of sphericalsilica (“SOC2”, manufactured by Admatechs Company Limited, averageparticle diameter 0.5 μm) with its surface treated with an aminosilanecoupling agent (“KBM573”, manufactured by Shin-Etsu Chemical Co., Ltd.),and 2 parts of a polyvinyl butyral resin solution (weight averagemolecular weight 27000, glass transition temperature 105° C., “KS-1”,manufactured by Sekisui Chemical Co., Ltd., a mixed solution containingethanol and toluene in a mass ratio of 1:1 and having a nonvolatilecomponent of 15% by mass) were mixed and uniformly dispersed in ahigh-speed rotation mixer to prepare a resin varnish A. The content ofthe inorganic filler (spherical silica) was 69.4% by mass when the totalmass of the nonvolatile components in the resin varnish A was determinedto be 100% by mass.

(3) Preparation of Adhesive Sheet

The resin varnish A prepared in the (2) was uniformly applied onto thereleasing layer of the support prepared in the (1) using a die coater,and the applied varnish was dried at 80° C. to 120° C. (in average 100°C.) for 6 minutes to form a resin composition layer bonded to thesupport. The thickness of the obtained resin composition layer was 40 μmand the residual solvent amount was about 2% by mass. Subsequently, theresin composition layer was wound into a roll while laminating the resincomposition layer with a polypropylene film as a protection film(thickness 15 μm). The obtained roll-form adhesive sheet was slit to awidth of 507 mm to produce an adhesive sheet having a size of 507 mm×336mm.

Example 2

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that a resin varnish B was prepared as described below.

(1) Preparation of Resin Varnish B

28 parts of a liquid bisphenol A type epoxy resin (epoxy equivalent 180,“jER828EL”, manufactured by Mitsubishi Chemical Corporation) and 28parts of a naphthalene type tetrafunctional epoxy resin (epoxyequivalent 163, “HP-4700”, manufactured by DIC Corporation) were heatedand dissolved in a mixed solvent of 15 parts of methyl ethyl ketone(MEK) and 15 parts of cyclohexanone with stirring. To this solution, 110parts of a naphthol type curing agent having a novolac structure(phenolic hydroxy group equivalent 215, “SN-485”, manufactured by NIPPONSTEEL & SUMIKIN CHEMICAL CO., LTD., a MEK solution having a nonvolatilecomponent of 50%), 0.1 parts of a curing accelerator (“2E4MZ”,manufactured by SHIKOKU CHEMICALS CORPORATION), 70 parts of sphericalsilica (“SOC2” manufactured by Admatechs Company Limited, averageparticle diameter of 0.5 μm), and 35 parts of a polyvinyl butyral resinsolution (“KS-1”, manufactured by Sekisui Chemical Co., Ltd., a mixedsolution containing ethanol and toluene in a mass ratio of 1:1 andhaving a nonvolatile component of 15%) were mixed and uniformlydispersed in a high-speed rotation mixer to prepare a resin varnish B.The content of the inorganic filler in the resin varnish B was 38% bymass when the total mass of the nonvolatile components in the resinvarnish B was determined to be 100% by mass. (Total number of epoxygroups of epoxy resi):(Total number of reactive groups of curing agent)was 1:0.78.

Example 3

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 2 in Table 1.

Example 4

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 2 in Table 1.

Example 5

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 3 in Table 1.

Example 6

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 3 in Table 1.

Example 7

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 5 in Table 1.

Example 8

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 5 in Table 1.

Example 9

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 6 in Table 1.

Example 10

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 6 in Table 1.

Comparative Example 1

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was used as the supportwithout preheating treatment.

Comparative Example 2

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was used as the supportwithout preheating treatment.

Comparative Example 3

The support and the adhesive sheet were prepared in a similar manner toExample 1 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 4 in Table 1.

Comparative Example 4

The support and the adhesive sheet were prepared in a similar manner toExample 2 except that the release PET film was preheated under tensionunder the conditions of the preheating condition 4 in Table 1.

The expansion coefficient of the support, the temperature relating tothe expansion coefficient, and the minimum melt viscosity of the resincomposition layer according to Examples described above are listed inTable 2. The measurement of the height of the highest point of theraised part and evaluation of the insulating layer in the vicinity ofthe end part of the support are listed in Table 3 and Table 5.Evaluation of wrinkle and lifting of the support and evaluation of theresin chip adhesion are listed in Table 3 and Table 5.

TABLE 2 Examples 1 2 3 4 5 6 7 8 9 10 Resin Resin varnish A B A B A B AB A B composition Thickness (μm) 40 40 40 40 40 40 40 40 40 40 layerMinimum melt viscosity(poise) 3400 4000 3400 4000 3400 4000 3400 40003400 4000 Minimum melt viscosity when 3600 3900 3600 3900 10000 100003600 3900 3600 3900 expansion coefficient of support in TD direction is0 (%) or less(poise) Minimum melt viscosity when 3600 3900 3600 39003600 3900 3800 3900 3600 3900 expansion coefficient of support in MDdirection is 0 (%) or less(poise) Support Maximum expansion coefficient−0.23 −0.23 −0.05 −0.05 0.19 0.19 0.15 0.15 0.07 0.07 E_(TD)(%)in TDdirection at 100° C. or more Maximum expansion coefficient −0.35 −0.35−0.31 −0.31 0.1 0.1 0.09 0.09 −0.08 −0.08 E_(MD)(%) in MD direction at100° C. or more Maximum expansion coefficient −0.28 −0.28 −0.07 −0.070.02 0.02 0.11 0.11 −0.08 −0.08 E_(TD)(%)in TD direction at 120° C. ormore Maximum expansion coefficient −0.41 −0.41 −0.33 −0.33 −0.18 −0.180.02 0.02 −0.14 −0.14 E_(MD)(%) in MD direction at 120° C. or moreTemperature at which expansion 70 70 80 80 85 85 115 115 90 90coefficient in TD direction becomes maximum (° C.) Temperature at whichexpansion 75 75 75 75 70 70 85 85 80 80 coefficient in MD directionbecomes maximum (° C.) Temperature T_(TD) at which 85 85 90 90 165 165130 130 105 105 expansion coefficient in TD direction becomes 0(%) (°C.) Temperature T_(MD) at which 95 95 90 90 90 90 125 125 95 95expansion coefficient in MD direction becomes 0(%) (° C.)

TABLE 3 Examples 1 2 3 4 5 6 7 8 9 10 Evaluation TD Evaluation board A:height of highest point 64 49 61 67 53 71 68 72 59 65 result directionof raised part(μm) Evaluation board B: height of highest point 81 90 7586 126  130  84 89 81 87 of raised part(μm) Evaluation of insulatinglayer in the ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ vicinity of edge part of support MDEvaluation board A: height of highest point 58 43 54 48 37 67 42 51 5548 direction of raised part(μm) Evaluation board B: height of highest 7884 83 80 87 86 88 83 84 88 point of raised part(μm) Evaluation ofinsulating layer in the ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ vicinity of edge part ofsupport Winkles and lifting of support ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ Resin chipadhesion ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘ ∘

The expansion coefficient of the support, the temperature relating tothe expansion coefficient, and the minimum melt viscosity of the resincomposition layer (resin composition) according to Comparative Examplesare listed in Table 4. The measurement of the height of the highestpoint of the raised part and evaluation of the insulating layer in thevicinity of the end part of the support are listed in Table 5. In Table4, the sign “−” means that the minimum melt viscosity was not able to bemeasured or the expansion coefficient did not have a negative value.

TABLE 4 Comparative Example 1 2 3 4 Resin Resin varnish A B A Acomposition Thickness (μm) 40 40 40 40 layer Minimum melt viscosity(poise) 3400 4000 3400 4000 Minimum melt viscosity when expansion — —40000 70000 coefficient of support in TD direction is 0 (%) or less(poise) Minimum melt viscosity when expansion 3700 3900 3600 3900coefficient of support in MD direction is 0 (%) or less (poise) SupportMaximum expansion coefficient E_(TD) (%) in 1.1 1.1 0.58 0.58 TDdirection at 100° C. or more Maximum expansion coefficient E_(MD) (%) in−0.2 −0.2 −0.15 −0.15 MD direction at 100° C. or more Maximum expansioncoefficient E_(TD) (%) in 1.1 1.1 0.58 0.58 TD direction at 120° C. ormore Maximum expansion coefficient E_(MD) (%) in −0.25 −0.25 −0.2 −0.2MD direction at 120° C. or more Temperature at which expansioncoefficient 170 170 165 165 in TD direction becomes maximum (° C.)Temperature at which expansion coefficient 85 85 85 85 in MD directionbecomes maximum (° C.) Temperature T_(TD) at which expansion — — 180 180coefficient in TD direction becomes 0 (%) (° C.) Temperature T_(MD) atwhich expansion 95 95 85 85 coefficient in MD direction becomes 0 (%) (°C.)

TABLE 5 Comparative Example 1 2 3 4 Evaluation TD Evaluation board A;height of highest 170 145 135 129 result direction point of raised part(μm) Evaluation board B height of 192 165 175 163 highest point ofraised part (μm) Evaluation of insulating layer in the x x x x vicinityof edge part of support MD Evaluation board A: height of highest 54 4257 46 direction point of raised part (μm) Evaluation board B: height ofhighest 81 76 84 82 point of raised part (μm) Evaluation of insulatinglayer in the ∘ ∘ ∘ ∘ vicinity of edge part of support Winkles andlifting of support x x x x Resin chip adhesion x x x x

As is clear from the above description, in Examples 1 to 10, the heightof the highest point of the raised part at the end part side in the TDdirection was reduced compared with Comparative Examples 1 to 4, andthus the insulating layer was prevented from running on the support. Inother words, the flatness of the insulating layer was improved inExamples 1 to 10.

Where a numerical limit or range is stated herein, the endpoints areincluded. Also, all values and subranges within a numerical limit orrange are specifically included as if explicitly written out.

As used herein the words “a” and “an” and the like carry the meaning of“one or more.”

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that, within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

All patents and other references mentioned above are incorporated infull herein by this reference, the same as if set forth at length.

1. A support satisfying a condition (MD1) and a condition (TD1) belowwhen being heated under heating conditions below: Heating conditions:temperature is raised from 20° C. to 100° C. at a rate of temperaturerise of 8° C./min and heating is carried out at 100° C. for 30 minutes,and thereafter the temperature is raised to 180° C. at a rate oftemperature rise of 8° C./min and heating is carried out at 180° C. for30 minutes, Condition (MD1): a maximum expansion coefficient E_(MD) (%)in an MD direction at 120° C. or more is less than 0.2%, and Condition(TD1): a maximum expansion coefficient E_(TD) (%) in a TD direction at120° C. or more is less than 0.2%.
 2. The support according to claim 1,wherein said support satisfies a condition (MD2) and a condition (TD2):Condition (MD2): the maximum expansion coefficient E_(MD) (%) in the MDdirection at 100° C. or more is less than 0%, and Condition (TD2): themaximum expansion coefficient E_(TD) (%) in the TD direction at 100° C.or more is less than 0%.
 3. A support satisfying a condition (MD3) and acondition (TD3) below when being heated under heating conditions below:Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes, Condition (MD3): a temperature at which anexpansion coefficient in an MD direction becomes maximum is less than120° C., and Condition (TD3): a temperature at which an expansioncoefficient in a TD direction becomes maximum is less than 120° C.
 4. Asupport satisfying a condition (MD4) and a condition (TD4) below:Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C., andCondition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.
 5. Anadhesive sheet, comprising: a support satisfying a condition (MD1) and acondition (TD1) below when being heated under heating conditions below:Heating conditions: temperature is raised from 20° C. to 100° C. at arate of temperature rise of 8° C./min and heating is carried out at 100°C. for 30 minutes, and thereafter the temperature is raised to 180° C.at a rate of temperature rise of 8° C./min and heating is carried out at180° C. for 30 minutes, Condition (MD1): a maximum expansion coefficientE_(MD) (%) in an MD direction at 120° C. or more is less than 0.2%, andCondition (TD1): a maximum expansion coefficient E_(TD) (%) in a TDdirection at 120° C. or more is less than 0.2%; and a resin compositionlayer bonded to said support.
 6. The adhesive sheet according to claim5, wherein said support satisfies a condition (MD2) and a condition(TD2) below: Condition (MD2): the maximum expansion coefficient E_(MD)(%) in the MD direction at 100° C. or more is less than 0%, andCondition (TD2): the maximum expansion coefficient E_(TD) (%) in the TDdirection at 100° C. or more is less than 0%.
 7. An adhesive sheet,comprising: a support satisfying a condition (MD3) and a condition (TD3)below when being heated under the following heating conditions: Heatingconditions: temperature is raised from 20° C. to 100° C. at a rate oftemperature rise of 8° C./min and heating is carried out at 100° C. for30 minutes, and thereafter the temperature is raised to 180° C. at arate of temperature rise of 8° C./min and heating is carried out at 180°C. for 30 minutes, Condition (MD3): a temperature at which an expansioncoefficient in an MD direction becomes maximum is less than 120° C., andCondition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.; and a resin compositionlayer bonded to said support.
 8. An adhesive sheet, comprising: asupport satisfying a condition (MD4) and a condition (TD4) below:Condition (MD4): a temperature at which an expansion coefficient of thesupport in an MD direction becomes maximum is less than 120° C., andCondition (TD4): a temperature at which an expansion coefficient of thesupport in a TD direction becomes maximum is less than 120° C.; and aresin composition layer bonded to said support.
 9. A method formanufacturing a printed wiring board, comprising: (A) laminating anadhesive sheet comprising a support and a resin composition layer bondedto said support to an inner layer board so that said resin compositionlayer is bonded to said inner layer board; (B) thermally curing saidresin composition layer to form an insulating layer; and (C) removingsaid support, in this order, wherein said support satisfies a condition(MD1) and a condition (TD1) below when being heated under heatingconditions below: Heating conditions: temperature is raised from 20° C.to 100° C. at a rate of temperature rise of 8° C./min and heating iscarried out at 100° C. for 30 minutes, and thereafter the temperature israised to 180° C. at a rate of temperature rise of 8° C./min and heatingis carried out at 180° C. for 30 minutes, Condition (MD1): a maximumexpansion coefficient E_(MD) (%) in an MD direction at 120° C. or moreis less than 0.2%, and Condition (TD1): a maximum expansion coefficientE_(TD) (%) in a TD direction at 120° C. or more is less than 0.2%. 10.The method according to claim 9, wherein said support satisfies acondition (MD2) and a condition (TD2) below: Condition (MD2): themaximum expansion coefficient E_(MD) (%) in the MD direction at 100° C.or more is less than 0%, and Condition (TD2): the maximum expansioncoefficient E_(TD) (%) in the TD direction at 100° C. or more is lessthan 0%.
 11. A method for manufacturing a printed wiring board,comprising: (A) laminating an adhesive sheet comprising a support and aresin composition layer bonded to said support to an inner layer boardso that said resin composition layer is bonded to said inner layerboard; (B) thermally curing said resin composition layer to form aninsulating layer; and (C) removing said support, in this order, whereinsaid support satisfies a condition (MD3) and a condition (TD3) belowwhen being heated under heating conditions below: Heating conditions:temperature is raised from 20° C. to 100° C. at a rate of temperaturerise of 8° C./min and heating is carried out at 100° C. for 30 minutes,and thereafter the temperature is raised to 180° C. at a rate oftemperature rise of 8° C./min and heating is carried out at 180° C. for30 minutes, Condition (MD3): a temperature at which an expansioncoefficient in an MD direction becomes maximum is less than 120° C., andCondition (TD3): a temperature at which an expansion coefficient in a TDdirection becomes maximum is less than 120° C.
 12. A method formanufacturing a printed wiring board, comprising: (A) laminating anadhesive sheet comprising a support and a resin composition layer bondedto said support to an inner layer board so that said resin compositionlayer is bonded to said inner layer board; (B) thermally curing saidresin composition layer to form an insulating layer; and (C) removingsaid support, in this order, wherein in said (B) thermally curing, acondition (MD4) and a condition (TD4) below are satisfied: Condition(MD4): a temperature at which an expansion coefficient of the support inan MD direction becomes maximum is less than 120° C., and Condition(TD4): a temperature at which an expansion coefficient of the support ina TD direction becomes maximum is less than 120° C.
 13. The methodaccording to claim 9, wherein Step (B) comprises: (i) heating said resincomposition layer at a temperature T₁ (50° C.≦T₁<150° C.) and; (ii)thermally curing said resin composition layer at a temperature T₂ (150°C.≦T₂≦240° C.) after said (i) heating.
 14. The method according to claim9, wherein under said heating conditions, a minimum melt viscosity ofsaid resin composition layer when the expansion coefficient of thesupport in the TD direction is 0 (%) or less is 10,000 poise or less,and a minimum melt viscosity of said resin composition layer when theexpansion coefficient of the support in the MD direction is 0 (%) orless is 10,000 poise or less.
 15. A semiconductor device, comprising aprinted wiring board manufacturing by a method according to claim
 9. 16.A laminated structure, comprising: an inner layer board; an insulatinglayer provided on said inner layer board; and a support bonded to saidinsulating layer, wherein when a thickness of a central part of saidinsulating layer is determined to be t (μm), a thickness of saidinsulating layer comprising a raised part outside said central part is2.5t (μm) or less.
 17. The laminated structure according to claim 16,wherein said thickness t satisfies t≦40.
 18. A laminated structure,comprising: an inner layer board; an insulating layer provided on saidinner layer board; and a support bonded to said insulating layer,wherein a highest point of a raised part of said insulating layer towhich said support is bonded is at a position lower than a height of asurface of said support.
 19. A laminated structure, comprising: an innerlayer board; an insulating layer provided on said inner layer board; anda support bonded to thsaide insulating layer, wherein a difference inheight between a lowest point and a highest point is 60 μm or less,where at the lowest point a height of said insulating layer that is aheight from an interface between said insulating layer and said innerlayer board to an interface where said insulating layer and said supportare bonded is the lowest, and at the highest point the height of saidinsulating layer is the highest.